Product Information

FDD3860

FDD3860 electronic component of ON Semiconductor

Datasheet
MOSFET 100V N-Channel Power Trench

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8044 ea
Line Total: USD 0.8

40504 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
40504 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

FDD3860
ON Semiconductor

1 : USD 0.8044
10 : USD 0.7131
100 : USD 0.6241
500 : USD 0.5861
1000 : USD 0.5375
2500 : USD 0.5375
5000 : USD 0.5351
10000 : USD 0.5173
25000 : USD 0.5161

1778 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

FDD3860
ON Semiconductor

1 : USD 1.222
5 : USD 1.105
19 : USD 0.9061
50 : USD 0.8567
500 : USD 0.819

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDD3860 N-Channel PowerTrench MOSFET FDD3860 N-Channel PowerTrench MOSFET 100 V, 29 A, 36 m Features General Description Max r = 36 m at V = 10 V, I = 5.9 A This N-Channel MOSFET is rugged gate version of ON DS(on) GS D Semiconductors advanced Power Trench process. This part is High Performance Trench Technology for Extremely Low tailored for low r and low Qg figure of merit, with avalanche DS(on) r DS(on) ruggedness for a wide range of switching applications. 100% UIL Tested Applications RoHS Compliant DC-AC Conversion Synchronous Rectifier D D G G S D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25C 29 C I -Continuous T = 25C (Note 1a) 6.2 A D A -Pulsed 60 E Single Pulse Avalanche Energy (Note 3) 121 mJ AS Power Dissipation T = 25C 83 C P W D Power Dissipation T = 25C (Note 1a) 3.75 A T , T Operating and Storage Junction Temperature Range -55 to +175 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.8 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD3860 FDD3860 D-PAK (TO-252) 13 16 mm 2500 units 1 2008 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev.2 FDD3860/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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