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V = 10 V, I = 26 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductors advanced PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while maintain- ing superior switching performance. Low Gate Charge, Q = 14.3 nC( Typ.) G High Performance Trench Technology for Extremely Low R DS(on) Applications High Power and Current Handling Capability Consumer Appliances RoHS Compliant LED TV Synchronous Rectification Uninterruptible Power Supply Micro Solar Inverter D D G G D-PAK S S o Absolute Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDD390N15A Unit V Drain to Source Voltage 150 V DSS - DC 20 V Gate to Source Voltage V GSS - AC (f > 1 Hz) 30 o - Continuous (T = 25 C,Silicon Limited) 26 C I Drain Current A D o - Continuous (T = 100 C,Silicon Limited) 17 C I Drain Current - Pulsed (Note 1) 104 A DM E Single Pulsed Avalanche Energy (Note 2) 78 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 63 W C P Power Dissipation D o o - Derate above 25C0.5W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o 300 C T L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter Unit FDD390N15A R Thermal Resistance, Junction to Case, Max. 2.0 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 87 JA 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDD390N15A Rev. 1.1