X-On Electronics has gained recognition as a prominent supplier of FDD5680 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDD5680 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDD5680 ON Semiconductor

FDD5680 electronic component of ON Semiconductor
FDD5680 ON Semiconductor
FDD5680 MOSFETs
FDD5680  Semiconductors

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See Product Specifications
Part No. FDD5680
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET N-Ch PowerTrench
Datasheet: FDD5680 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.7299 ea
Line Total: USD 1.73 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 14 May to Tue. 20 May
MOQ : 2500
Multiples : 2500
2500 : USD 0.7141
5000 : USD 0.6941

0
Ship by Wed. 14 May to Tue. 20 May
MOQ : 504
Multiples : 504
504 : USD 0.7145

0
Ship by Mon. 12 May to Wed. 14 May
MOQ : 1
Multiples : 1
1 : USD 1.7299
10 : USD 1.134
100 : USD 0.7453
500 : USD 0.6612
1000 : USD 0.6078
2500 : USD 0.5896
5000 : USD 0.5657
25000 : USD 0.5646

0
Ship by Mon. 12 May to Wed. 14 May
MOQ : 1
Multiples : 1
1 : USD 1.939
5 : USD 1.2497
18 : USD 0.9092
48 : USD 0.8589

0
Ship by Wed. 14 May to Tue. 20 May
MOQ : 2500
Multiples : 2500
2500 : USD 0.6353
5000 : USD 0.6226

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
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Configuration
Series
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Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Length
Transistor Type
Type
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Typical Turn-On Delay Time
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We are delighted to provide the FDD5680 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDD5680 and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDD5680 March 2015 FDD5680 N-Channel, PowerTrench MOSFET Features General Description This N-Channel MOSFET is produced using ON 38 A, 60 V. R = 0.021 V = 10 V DS(on) GS Semiconductor s advanced PowerTrench process that has R = 0.025 V = 6 V. been especially tailored to minimize the on-state DS(on) GS resistance and yet maintain low gate charge for superior Low gate charge (33nC typical). switching performance. Fast switching speed. Applications High performance trench technology for extremely low R . DC/DC converter DS(on) Motor drives D D G G S S TO-252 o TA=25 C unless otherwise noted Absolute Maximum Ratings Symbol Parameter Ratings Units V Drain-Source Voltage 60 V DSS V Gate-Source Voltage 20 V GSS I Maximun Drain Current - Continuous (Note 1) 38 A D (Note 1a) 8.5 Maximum Drain Current - Pulsed 100 o P Maximum Power Dissipation T = 25 C (Note 1) 60 W D C o (Note 1a) T = 25 C 2.8 A o T = 25 C (Note 1b) 1.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg Thermal Characteristics R Thermal Resistance, Junction-to- Case (Note 1) 2.1 C/W JC (Note 1b) R Thermal Resistance, Junction-to- Ambient 96 C/W JA Package Marking and Ordering Information Device Marking Device Reel Siz e Tape width Quantity FDD5680 FDD5680 13 16mm 2500 2000 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 3 FDD5680/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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