FDG311N ON Semiconductor

FDG311N electronic component of ON Semiconductor
FDG311N ON Semiconductor
FDG311N MOSFETs
FDG311N  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDG311N MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDG311N MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FDG311N
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET SC70-6 N-CH 20V
Datasheet: FDG311N Datasheet (PDF)
Price (USD)
1505: USD 0.3116 ea
Line Total: USD 468.96 
Availability : 56132
  
Ship by Tue. 09 Sep to Mon. 15 Sep
QtyUnit Price
1505$ 0.3116
10000$ 0.2776
100000$ 0.2326

Availability 56132
Ship by Tue. 09 Sep to Mon. 15 Sep
MOQ : 1505
Multiples : 1
QtyUnit Price
1505$ 0.3116
10000$ 0.2776
100000$ 0.2326

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Continuous Drain Current
Drain-Source Breakdown Voltage
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Gate-Source Breakdown Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FDG311N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDG311N and other electronic components in the MOSFETs category and beyond.

Image Part-Description
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Image Part-Description
Stock Image FDG312P
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.FDG311N February 2000 FDG311N N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild 1.9 A, 20 V. R = 0.115 V = 4.5 V DS(ON) GS Semiconductor s advanced PowerTrench process that R = 0.150 V = 2.5 V. has been especially tailored to minimize the on-state DS(ON) GS resistance and yet maintain low gate charge for superior switching performance. These devices are Low gate charge (3nC typical). well suited for portable electronics applications. High performance trench technology for extremely low Applications R . DS(ON) Load switch Compact industry standard SC70-6 surface mount Power management package. DC/DC converter S 1 6 D D 2 5 G D 33 4 D SC70-6 Absolute Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage 8 V GSS I Drain Current - Continuous (Note 1a) 1.9 A D - Pulsed 6 P D Power Dissipation for Single Operation (Note 1a) 0.75 W (Note 1b) 0.48 T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1b) 260 C/W JA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity .11 FDG311N 7 8mm 3000 units 2000 Fairchild Semiconductor Corporation FDG311N Rev. D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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