MOSFET N-Channel, UniFET , FRFET 500 V, 45 A, 120 m FDH45N50F Description UniFET MOSFET is ON Semiconductors high voltage MOSFET www.onsemi.com family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce onstate resistance, and to provide better switching performance and higher avalanche energy strength. The V R MAX I MAX DS DS(ON) D body diodes reverse recovery performance of UniFET FRFET 500 V 120 m 10 V 45 A MOSFET has been enhanced by lifetime control. Its t is less than rr 100 nsec and the reverse dv/dt immunity is 15 V/ns while normal planar MOSFETs have over 200 nsec and 4.5 V/nsec respectively. D Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFETs body diode is significant. This device family is suitable G for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. S N-CHANNEL MOSFET Features R = 105 m (Typ.) V = 10 V, I = 22.5 A DS(on) GS D Low Gate Charge (Typ. 105 nC) S D Low C (Typ. 62 pF) GG rss 100% Avalanche Tested These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant TO2473LD Applications CASE 340CK Lighting Uninterruptible Power Supply MARKING DIAGRAM ACDC Power Supply Y&Z&3&K FDH 45N50F Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FDH45N50F = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2019 Rev. 4 FDH45N50F/DFDH45N50F ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FDH45N50FF133 Unit V Drain to Source Voltage 500 V DSS I Drain Current Continuous (T = 25C) 45 A D C 28.4 A Continuous (T = 100C) C I Drain Current Pulsed (Note 1) 180 A DM V GateSource Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 1868 mJ AS I Avalanche Current (Note 1) 45 A AR E Repetitive Avalanche Energy (Note 1) 62.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns P Power Dissipation (T = 25C) 625 W D C Derate Above 25C 5 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Second 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. L = 1.46 mH, I = 48 A, V = 50 V, R = 25 , Starting T = 25 C. AS DD G J 3. I 45 A, di/dt 200 A/ s, V BV , Starting T = 25 C. SD DD DSS J PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Package Method Reel Size Tape Width Quantity FDH45N50FF133 FDH45N50F TO2473 Tube 30 Units THERMAL CHARACTERISTICS Symbol Parameter FDH45N50FF133 Unit R Thermal Resistance, Junction to Case, Max. 0.2 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA www.onsemi.com 2