We are the renowned IPA60R099P7XKSA1 MOSFET seller and distributer in the USA, India, Europe, Australia, and beyond. IPA60R099P7XKSA1 MOSFET is a manufacturer from Infineon. X-ON Electronics Components provides affordable electronic MOSFET in the USA.

IPA60R099P7XKSA1

IPA60R099P7XKSA1 electronic component of Infineon
Part No.IPA60R099P7XKSA1
Manufacturer: Infineon
Category:MOSFET
Description: MOSFET HIGH POWER_NEW
Datasheet: IPA60R099P7XKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.307 ea
Line Total: USD 4.31

447 - Global Stock
Ships to you between
Tue. 04 Jun to Thu. 06 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
447 - WHS 1


Ships to you between Tue. 04 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 4.1745
25 : USD 3.404
100 : USD 2.944
500 : USD 2.6335
1000 : USD 2.323
5000 : USD 2.2195

We proudly offer the IPA60R099P7XKSA1 MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the IPA60R099P7XKSA1 MOSFET.
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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The Infineon IPA60R099P7XKSA1 is a high-power metal-oxide-semiconductor field-effect transistor (MOSFET) designed for high-efficiency power conversion in a variety of applications. This device is capable of operating at a maximum current of 30A and a maximum drain-source voltage of 99V. It features typical RDS(ON) of 0.09O at 25°C, and a maximum junction temperature of 150°C. This MOSFET is designed to reduce power loss and minimize acoustic noise. It is available in the TO-247 package and is suitable for a variety of applications including motor control, inverter and server power supplies, et cetera. It has a wide range of typical Vth of 3-8V and operation over a -55°C to +150°C temperature range.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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