The Infineon IPA60R099P7XKSA1 is a high-power metal-oxide-semiconductor field-effect transistor (MOSFET) designed for high-efficiency power conversion in a variety of applications. This device is capable of operating at a maximum current of 30A and a maximum drain-source voltage of 99V. It features typical RDS(ON) of 0.09O at 25°C, and a maximum junction temperature of 150°C. This MOSFET is designed to reduce power loss and minimize acoustic noise. It is available in the TO-247 package and is suitable for a variety of applications including motor control, inverter and server power supplies, et cetera. It has a wide range of typical Vth of 3-8V and operation over a -55°C to +150°C temperature range.