Product Information

FDMC2514SDC

FDMC2514SDC electronic component of ON Semiconductor

Datasheet
MOSFET 25V NChan Dual Cool PowerTrench SyncFET

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000

Stock Image

FDMC2514SDC
ON Semiconductor

3000 : USD 1.2917
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

FDMC2514SDC
ON Semiconductor

1 : USD 2.7612
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

FDMC2514SDC
ON Semiconductor

1 : USD 5.67
10 : USD 1.9159
100 : USD 1.5638
500 : USD 1.3463
1000 : USD 1.1702
3000 : USD 1.1288
6000 : USD 1.1081
9000 : USD 1.077
24000 : USD 1.077
N/A

Obsolete
0 - WHS 4

MOQ : 3000
Multiples : 3000

Stock Image

FDMC2514SDC
ON Semiconductor

3000 : USD 1.003
N/A

Obsolete
0 - WHS 5

MOQ : 3000
Multiples : 3000

Stock Image

FDMC2514SDC
ON Semiconductor

3000 : USD 1.003
N/A

Obsolete
0 - WHS 6

MOQ : 3000
Multiples : 3000

Stock Image

FDMC2514SDC
ON Semiconductor

3000 : USD 1.1109
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. TM TM FDMC2514SDC N-Channel Dual Cool 33 PowerTrench SyncFET FDMC2514SDC TM TM N-Channel Dual Cool 33 PowerTrench SyncFET 25 V, 40 A, 3.5 m General Description This N-Channel MOSFET is produced using ON Semiconductors advanced PowerTrench process. Features TM Advancements in both silicon and Dual Cool package TM Dual Cool Top Side Cooling PQFN package technologies have been combined to offer the lowest r DS(on) while maintaining excellent switching performance by extremely Max r = 3.5 m at V = 10 V, I = 22.5 A DS(on) GS D low Junction-to-Ambient thermal resistance. This device has the Max r = 4.7 m at V = 4.5 V, I = 18 A added benefit of an efficient monolithic Schottky body diode. DS(on) GS D High performance technology for extremely low r DS(on) Applications Synchronous Rectifier for DC/DC Converters SyncFET Schottky Body Diode Telecom Secondary Side Rectification RoHS Compliant High End Server/Workstation Vcore Low Side Pin 1 G S S D G 5 4 S D 6 3 S D 7 2 S D D D D S D 8 1 TM Top Dual Cool 33 Bottom MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage (Note 4) 20 V GS Drain Current -Continuous (Package limited) T = 25 C 40 C -Continuous (Silicon limited) T = 25 C 106 C I A D -Continuous T = 25 C (Note 1a) 24 A -Pulsed 200 E Single Pulse Avalanche Energy (Note 3) 84 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 5) 2.0 V/ns Power Dissipation T = 25 C 60 C P W D Power Dissipation T = 25 C (Note 1a) 3.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Top Source) 5.8 JC R Thermal Resistance, Junction to Case (Bottom Drain) 2.1 JC R Thermal Resistance, Junction to Ambient (Note 1a) 42 JA R Thermal Resistance, Junction to Ambient (Note 1b) 105 C/W JA R Thermal Resistance, Junction to Ambient (Note 1i) 17 JA R Thermal Resistance, Junction to Ambient (Note 1j) 26 JA R Thermal Resistance, Junction to Ambient (Note 1k) 12 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity TM 2514S FDMC2514SDC Dual Cool 33 13 12 mm 3000 units 1 2010 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 2 FDMC2514SDC/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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