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FDMS86150ET100 N-Channel Shielded Gate PowerTrench MOSFET January 2015 FDMS86150ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.85 m Features Extended T rating to 175C General Description J Shield ed Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that = 4.85 m at V = 10 V, I = 16 A Max r DS(on) GS D incorporates Shielded Gate technology. This process has been = 7.8 m at V = 6 V, I = 13 A optimized for the on-state resistance and yet maintain superior Max r DS(on) GS D switching performance. Advanced Package and Silicon combination for low r DS(on) and high efficiency Applications MSL1 robust package design Primary DC-DC MOSFET 100% UIL tested Secondary Synchronous Rectifier RoHS Compliant Load Switch Bottom Top Pin 1 S S D S Pin 1 S G D S D S D D D D G D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C (Note 5) 128 C -Continuous T = 100 C (Note 5) 90 C I A D -Continuous T = 25 C (Note 1a) 16 A -Pulsed (Note 4) 617 E Single Pulse Avalanche Energy (Note 3) 726 mJ AS Power Dissipation T = 25 C 187 C P W D Power Dissipation T = 25 C (Note 1a) 3.3 A T , T Operating and Storage Junction Temperature Range -55 to +175 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 0.8 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 45 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86150ET FDMS86150ET100 Power 56 13 12 mm 3000 units 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMS86150ET100 Rev.C