FDMS86500L MOSFET, NChannel, POWERTRENCH 60 V, 158 A, 2.5 m General Description www.onsemi.com This N Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or S D conventional switching PWM controllers. It has been optimized for low gate charge, low r , fast switching speed and body diode DS(on) D S reverse recovery performance. D S Features Max r = 2.5 m at V = 10 V, I = 25 A G D DS(on) GS D Max r = 3.7 m at V = 4.5 V, I = 20 A DS(on) GS D Advanced Package and Silicon combination for low r and high N-Channel MOSFET DS(on) efficiency Next generation enhanced body diode technology, engineered for soft Top Bottom Pin 1 recovery S S MSL1 robust package design S G 100% UIL tested D RoHS Compliant D D D Applications Power 56 (PQFN8) Primary Switch in Isolated DCDC CASE 483AE Synchronous Rectifier Load Switch MARKING DIAGRAM MAXIMUM RATINGS (T = 25C unless otherwise noted) A S D Symbol Parameter Ratings Unit Y&Z&3&K S D FDMS V Drain to Source Voltage 60 V DS S D 86500L V Gate to Source Voltage 20 V GS G D I Drain Current: A D Continuous T = 25C (Note 5) 158 C Continuous T = 100C (Note 5) 100 C Y = ON Semiconductor Logo Continuous T = 25C (Note 1a) 25 A &Z = Assembly Plant Code Pulsed (Note 4) 799 &3 = Data Code (Year & Week) &K = Lot E Single Pulse Avalanche Energy (Note 3) 240 mJ AS FDMS86500L = Specific Device Code P Power Dissipation: W D T = 25C 104 C T = 25C (Note 1a) 2.5 A ORDERING INFORMATION See detailed ordering and shipping information on page 2 of T , T Operating and Storage Junction Tempera- 55 to C J STG this data sheet. ture Range +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: November, 2018 Rev. 2 FDMS86500L/DFDMS86500L PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Quantity FDMS86500L FDMS86500L Power 56 (PQFN8) 3000/Tape&Reel (Pb-Free / Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case 1.2 C/W JC R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 60 V DSS D GS BV Breakdown Voltage Temperature I = 250 A, referenced to 25C 30 mV/C DSS D / T Coefficient J I Zero Gate Voltage Drain Current V = 48 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current, Forward V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 1 1.8 3 V GS(th) GS DS D V Gate to Source Threshold Voltage I = 250 A, referenced to 25C 7 mV/C GS(th) D / T Temperature Coefficient J r Static Drain to Source On Resistance V = 10 V, I = 25 A 2.1 2.5 m DS(on) GS D V = 4.5 V, I = 20 A 2.9 3.7 GS D V = 10 V, I = 25 A, T = 125C 3.1 3.7 GS D J g Forward Transconductance V = 5 V, I = 20 A 95 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 30 V, V = 0 V, f = 1 MHz 9420 12530 pF DS GS iss C Output Capacitance 1470 1955 pF oss C Reverse Transfer Capacitance 50 80 pF rss R Gate Resistance f = 1MHz 0.1 1.1 3.0 g SWITCHING CHARACTERISTICS t Turn-On Delay Time V = 30 V, I = 25 A, V = 10 V, 27 43 ns d(on) DD D GS R = 6 GEN t Rise Time 16 28 ns r t Turn-Off Delay Time 63 100 ns d(off) t Fall Time 7.8 16 ns f Q Total Gate Charge V = 0 V to 10 V, V = 30 V, 117 165 nC g GS DD I = 25 A D V = 0 V to 4.5 V, V = 30 V, 54 108 nC GS DD I = 25 A D Q Gate to Source Charge V = 30 V, I = 25 A 26.6 nC gs DD D Q Gate to Drain Miller Charge 11.5 nC gd www.onsemi.com 2