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FDMS86540 N-Channel PowerTrench MOSFET May 2015 FDMS86540 N-Channel PowerTrench MOSFET 60 V, 129 A, 3.4 m Features General Description Max r = 3.4 m at V = 10 V, I = 20 A This N-Channel MOSFET has been designed specifically to DS(on) GS D improve the overall efficiency and to minimize switch node Max r = 4.1 m at V = 8 V, I = 18.5 A DS(on) GS D ringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low r conventional switching PWM controllers.It has been optimized DS(on) for low gate charge, low r , fast switching speed and body and high efficiency DS(on) diode reverse recovery performance. Next generation enhanced body diode technology, engineered for soft recovery Applications MSL1 robust package design Primary Switch in isolated DC-DC 100% UIL tested Synchronous Rectifier RoHS Compliant Load Switch Bottom Top Pin 1 S D S S S D S G D S D D G D D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C (Note 5) 129 C -Continuous T = 100 C (Note 5) 82 C I A D -Continuous T = 25 C (Note 1a) 20 A -Pulsed (Note 4) 642 E Single Pulse Avalanche Energy (Note 3) 228 mJ AS Power Dissipation T = 25 C 96 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case 1.3 JC C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86540 FDMS86540 Power 56 13 12 mm 3000 units 2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMS86540 Rev. 1.4