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R = 22 m V = 10 V The FDS6990AS is designed to replace a dual SO-8 MOSFET DS(ON) GS R = 28 m V = 4.5 V and two Schottky diodes in synchronous DC:DC power sup- DS(ON) GS plies. This 30V MOSFET is designed to maximize power con- Includes SyncFET Schottky diode version efciency, providing a low R and low gate charge. DS(ON) Low gate charge (10nC typical) Each MOSFET includes integrated Schottky diodes using Fair- High performance trench technology for extremely low childs monolithic SyncFET technology. The performance of the R DS(ON) FDS6990AS as the low-side switch in a synchronous rectier is High power and current handling capability similar to the performance of the FDS6990A in parallel with a Schottky diode. Applications DC/DC converter Motor drives D1 D1 5 4 Q1 D2 6 3 D2 Q2 7 2 G1 SO-8 S1 G2 8 Pin 1 1 S2 Absolute Maximum Ratings T =25C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS I Drain Current Continuous (Note 1a) 7.5 A D Pulsed 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W JA R Thermal Resistance, Junction-to-Case (Note 1) 40 C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6990AS FDS6990AS 13 12mm 2500 units 2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS6990AS Rev. A2