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FDS86240 N-Channel Shielded Gate PowerTrench MOSFET www.onsemi.com FDS86240 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 7.5 A, 19.8 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using ON Semiconductors advanced PowerTrench process that Max r = 19.8 m at V = 10 V, I = 7.5 A DS(on) GS D incorporates Shielded Gate technology. This process has been optimized for r , switching performance and ruggedness. DS(on) Max r = 26 m at V = 6 V, I = 6.4 A DS(on) GS D Applications High Performance Trench Technology for Extremely Low DC/DC Converters and Off-Line UPS r DS(on) Distributed Power Architectures and VRMs High Power and Current Handling Capability in a Widely Used Surface Mount Package Primary Switch for 24 V and 48 V Systems 100% UIL Tested High Voltage Synchronous Rectifier RoHS Compliant D D 4 G D 5 D 6 S D D 3 7 2 S D G SO-8 S 8 1 D S S Pin 1 S MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous 7.5 I A D -Pulsed (Note 4) 199 E Single Pulse Avalanche Energy (Note 3) 220 mJ AS Power Dissipation T = 25 C (Note 1) 5.0 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 25 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS86240 FDS86240 SO-8 13 12 mm 2500 units Semiconductor Components Industries, LLC, 2016 Publication Order Number: December, 2016, Rev. 1.2 FDS86240/D 1