Product Information

FDS8880

FDS8880 electronic component of ON Semiconductor

Datasheet
Transistor: N-MOSFET; unipolar; 30V; 11.6A; 2.5W; SO8

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

22: USD 0.4243 ea
Line Total: USD 9.33

1253 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 22  Multiples: 1
Pack Size: 1
Availability Price Quantity
291 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

FDS8880
ON Semiconductor

1 : USD 1.0517
10 : USD 0.8762
25 : USD 0.8177
50 : USD 0.7592
100 : USD 0.6994

7 - WHS 2


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

FDS8880
ON Semiconductor

1 : USD 1.1965
10 : USD 0.9931
30 : USD 0.8903
100 : USD 0.7896
500 : USD 0.7293
1000 : USD 0.699

462 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3
Multiples : 1

Stock Image

FDS8880
ON Semiconductor

3 : USD 0.702
25 : USD 0.6253
34 : USD 0.481
93 : USD 0.455

1253 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 22
Multiples : 1

Stock Image

FDS8880
ON Semiconductor

22 : USD 0.4243
25 : USD 0.3882
100 : USD 0.3522
250 : USD 0.3452

     
Manufacturer
Product Category
Technology
Kind Of Package
Polarisation
Mounting
Case
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
LoadingGif

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The FDS8880 is a low-voltage dual N-channel logic level MOSFET offered by ON Semiconductor. It is designed specifically for applications that require a low gate-to-drain capacitance and a low on-state resistance while capable of sustaining high peak currents. This MOSFET has an operational frequency range from 5kHz to 1MHz and can be used in a wide variety of driving applications, such as motor control and power switch circuits. Its low capacitance facilitates faster switching and lower power losses. Its low on-state resistance ensures that low power consumption is achieved by lowering the overall power losses, thus improving efficiency.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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