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FDS89161LZ Dual N-Channel Shielded Gate PowerTrench MOSFET September 2015 FDS89161LZ Dual N-Channel Shielded Gate PowerTrench MOSFET 100 V, 2.7 A, 105 m Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process Max r = 105 m at V = 10 V, I = 2.7 A DS(on) GS D that incorporates Shielded Gate technology. This process has been optimized for the on-state resisitance and yet maintain Max r = 160 m at V = 4.5 V, I = 2.1 A DS(on) GS D superior switching performance. G-S zener has been added to enhance ESD voltage level. High performance trench technology for extremely low r DS(on) High power and current handling capability in a widely used surface mount package Application DC-DC conversion CDM ESD protection level > 2KV typical (Note 4) 100% UIL Tested RoHS Compliant D2 D2 G2 D2 D1 5 4 D1 Q2 S2 D2 6 3 G2 D1 G1 2 7 S2 Q1 G1 D1 S1 8 1 S1 Pin 1 SO-8 MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous 2.7 I A D -Pulsed 15 E Single Pulse Avalanche Energy (Note 3) 13 mJ AS Power Dissipation T = 25 C 31 C P W D Power Dissipation T = 25 C (Note1a) 1.6 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 40 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 78 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS89161LZ FDS89161LZ SO-8 13 12 mm 2500 units 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS89161LZ Rev. 1.2