FDD8878 / FDU8878 N-Channel PowerTrench MOSFET 0 April 2008 FDD8878 / FDU8878 tm N-Channel PowerTrench MOSFET 30V, 40A, 15m General Description Features This N-Channel MOSFET has been designed specifically to r = 15m , V = 10V, I = 35A DS(ON) GS D improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM r = 18.5m , V = 4.5V, I = 35A DS(ON) GS D controllers. It has been optimized for low gate charge, low r and fast switching speed. DS(ON) High performance trench technology for extremely low r DS(ON) Low gate charge Application DC / DC Converters High power and current handling capability RoHS Compliant D D G G S I-PAK D-PAK (TO-251AA) (TO-252) S G DS www.fairchildsemi.com 2008 Fairchild Semiconductor Corporation 1 FDD8878 / FDU8878 Rev. A4 FDD8878 / FDU8878 N-Channel PowerTrench MOSFET Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage 20 V GS Drain Current o 40 A Continuous (T = 25 C, V = 10V) (Note 1) C GS o I Continuous (T = 25 C, V = 4.5V) (Note 1) 36 A D C GS o o Continuous (T = 25 C, V = 10V, with R = 52 C/W) 11 A amb GS JA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 2) 25 mJ AS Power dissipation 40 W P D o o Derate above 25C0.27W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-252, TO-251 3.75 C/W JC o R Thermal Resistance Junction to Ambient TO-252, TO-251 100 C/W JA 2 o R Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8878 FDD8878 TO-252AA 13 12mm 2500 units FDU8878 FDU8878 TO-251AA Tube N/A 75 units F F Electrical Characteristics T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B Drain to Source Breakdown Voltage I = 250 A, V = 0V 30 - - V VDSS D GS V = 24V - - 1 DS I Zero Gate Voltage Drain Current A DSS o V = 0V T = 150C- - 250 GS C I Gate to Source Leakage Current V = 20V - - 100 nA GSS GS On Characteristics V Gate to Source Threshold Voltage V = V , I = 250 A 1.2 - 2.5 V GS(TH) GS DS D I = 35A, V = 10V - 0.011 0.015 D GS I = 35A, V = 4.5V - 0.014 0.0185 D GS r Drain to Source On Resistance DS(ON) I = 35A, V = 10V, D GS - 0.018 0.024 o T = 175 C J www.fairchildsemi.com 2008 Fairchild Semiconductor Corporation 2 FDD8878 / FDU8878 Rev. A4