DATA SHEET www.onsemi.com MOSFET N-Channel, V I MAX R MAX DSS D DS(on) POWERTRENCH 100 V 80 A 6.4 m 100 V, 80 A, 6.4 m ELECTRICAL CONNECTION FDWS86068-F085 Features Typ R = 5.2 m at V = 10 V, I = 80 A DS(on) GS D Typ Q = 31 nC at V = 10 V, I = 80 A g(tot) GS D UIS Capability Qualified to AEC Q101 NChannel MOSFET Wettable flanks for automatic optical inspection (AOI) These Devices are PbFree and are RoHS Compliant Bottom Top D D D Applications D Automotive Engine Control G S Powertrain Management S S Pin 1 Solenoid and Motor Drivers DFNW8 Electronic Steering CASE 507AU MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise specified) A MARKING DIAGRAM Symbol Parameter Ratings Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GS ON AYWWWL I Drain Current (T = 25C) A D C FDWS Continuous (V = 10 V) (Note 1) 80 GS 86068 Pulsed (see Fig. 4) E Single Pulse Avalanche Energy 36 mJ AS (Note 2) P Power Dissipation 214 W A = Assembly Location D Derate above 25C 1.43 W/C Y = Year WW = Work Week T , T Operating and Storage Temperature 55 to +150 C J STG WL = Assembly Lot R Thermal Resistance 0.7 C/W FDWS86068 = Specific Device Code JC (Junction to case) R Maximum Thermal Resistance 50 C/W JA ORDERING INFORMATION (Junction to Ambient) (Note 3) Stresses exceeding those listed in the Maximum Ratings table may damage the Device Package Shipping device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DFNW8 FDWS86068F085 3000 / 1. Current is limited by wirebond configuration. (Power 56) Tape & Reel 2. Starting T = 25C, L = 20 H, I = 60 A, V = 80 V during inductor charging J AS DD (PbFree) and V = 0 V during time in avalanche. DD 3. R is the sum of the junction to case and case to ambient thermal JA For information on tape and reel specifications, resistance where the case thermal reference is defined as the solder including part orientation and tape sizes, please mounting surface of the drain pins. R is guaranteed by design while R JC JA refer to our Tape and Reel Packaging Specification is determined by the users board design. The maximum rating presented Brochure, BRD8011/D. here is based on mounting on a 1 in2 pad of 2oz copper. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2021 Rev. 3 FDWS86068F085/DFDWS86068F085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS B Drain to Source Breakdown Voltage I = 250 A, V = 0 V 100 V VDSS D GS I Drain to Source Leakage Current V = 100 V, V = 0 V DSS DS GS (T = 25C) 1 A J (T = 175C) (Note 4) 1 mA J I Gate to Source Leakage Current V = 20 V 100 nA GSS GS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 2 3 4 V GS(th) GS DS D R Drain to Source On Resistance V = 10 V, I = 80 A DS(on) GS D (T = 25C) 5.2 6.4 m J (T = 175C) (Note 4) 11.4 14 J DYNAMIC CHARACTERISTICS C Input Capacitance V = 50 V, V = 0 V, 2220 pF iss DS GS f = 1 MHZ C Output Capacitance 1350 pF oss C Reverse Transfer Capacitance 19 pF rss R Gate Resistance V = 0.5 V, f = 1 MHz 0.3 g GS Q Total Gate Charge V = 0 to 10 V, V = 50 V, I = 80 A 31 43 nC g(tot) GS DD D Q Threshold Gate Charge 4 nC V = 0 to 2 V, V = 50 V, I = 80 A g(th) GS DD D Q Gate to Source Gate Charge V = 50 V, I = 80 A 12 nC gs DD D Q Gate to Drain Miller Charge 7 nC gd SWITCHING CHARACTERISTICS t Turn-On Time V = 50 V, I = 80 A, 30 ns DD D on V = 10 V, R = 6 GS GEN t Turn-On Delay Time 15 ns d(on) t Turn-On Rise Time 6 ns r t Turn-Off Delay Time 24 ns d(off) t Turn-Off Fall Time 7 ns f t Turn-Off Time 48 ns off DRAIN-SOURCE DIODE CHARACTERISTICS V Source to Drain Diode Forward I = 80 A, V =0V 0.95 1.3 V SD SD GS Voltage I =40A, V =0V 0.87 1.2 V SD GS T Reverse Recovery Time I = 80 A, dI /dt = 100 A/s 61 80 ns rr F SD Q Reverse Recovery Charge 56 84 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at T = 175C. Product is not tested to this condition in production J www.onsemi.com 2