FQD13N06L / FQU13N06L N-Channel QFET MOSFET July 2016 FQD13N06L / FQU13N06L N-Channel QFET MOSFET 60 V, 11 A, 115 m Features Description This N-Channel enhancement mode power MOSFET is 11 A, 60 V, R = 115 m (Max) V = 10 V, DS(on) GS I = 5.5 A produced using Fairchild Semiconductors proprietary D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 4.8 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior Low Crss (Typ. 17 pF) switching performance and high avalanche energy 100% Avalanche Tested strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and Low Level Gate Drive Requirements Allowing variable switching power applications. Direct Operation form Logic Drivers D 2, 4 4 4 1111 I-PAK 1 G 2 1 2 3 3 D-PAK S 3 o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQD13N06L TM / FQU13N06L TU Unit FQU13N06LTU WS V Drain-Source Voltage 60 V DSS I - Continuous (T = 25C) Drain Current 11 A D C - Continuous (T = 100C) 7 A C I Drain Current - Pulsed (Note 1) 44 A DM V Gate-Source Voltage 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 90 mJ AS I Avalanche Current (Note 1) 11 A AR E (Note 1) Repetitive Avalanche Energy 2.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns Power Dissipation (T = 25C) * 2.5 W P A D Power Dissipation (T = 25C) 28 W C - Derate above 25C 0.22 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case 5for Seconds Thermal Characteristics FQD13N06LTM Symbol Parameter FQU13N06LTU Unit FQU13N06LTU WS R Thermal Resistance, Junction to Case, Max. 2.5 JC o Thermal Resistance, Junction to Ambient ( Minimum Pad of 2 -oz Copper), Max. 110 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 50 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQD13N06L / FQU13N06L Rev. 1.7 FQD13N06L / FQU13N06L N-Channel QFET MOSFET Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FQD13N06LTM FQD13N06L D-PAK 330 mm 16 mm 2500 units Tape and Reel 7 0 units FQU13N06LTU FQU13N06L I-PAK Tube N/A N/A 75 units FQU13N06LTU WS FQU13N06LS I-PAK Tube N/A N/A o Electrical Characteristics T = 25 C unless otherwise noted. C Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BV V = 0 V, I = 250 A Drain-Source Breakdown Voltage 60 -- -- V DSS GS D BV DSS Breakdown Voltage Temperature I = 250 A, Referenced to 25C -- 0.05 -- V/C D / T Coefficient J I V = 60 V, V = 0 V -- -- 1 A DSS DS GS Zero Gate Voltage Drain Current V = 48 V, T = 150C -- -- 10 A DS C I V = 20 V, V = 0 V Gate-Body Leakage Current, Forward -- -- 100 nA GSSF GS DS I Gate-Body Leakage Current, Reverse V = -20 V, V = 0 V -- -- -100 nA GSSR GS DS On Characteristics V V = V , I = 250 A Gate Threshold Voltage 1.0 -- 2.5 V GS(th) DS GS D R V = 10 V, I = 5.5 A Static Drain-Source -- 0.092 0.115 DS(on) GS D On-Resistance V = 5 V, I = 5.5 A -- 0.115 0.145 GS D g Forward Transconductance V = 25 V, I = 5.5 A -- 6 -- S FS DS D Dynamic Characteristics C Input Capacitance -- 270 350 pF iss V = 25 V, V = 0 V, DS GS C Output Capacitance -- 95 125 pF oss f = 1.0 MHz C Reverse Transfer Capacitance -- 17 23 pF rss Switching Characteristics t Turn-On Delay Time -- 8 25 ns d(on) V = 30 V, I = 6.8 A, DD D t Turn-On Rise Time -- 90 190 ns r R = 25 G t Turn-Off Delay Time -- 20 50 ns d(off) (Note 4) t Turn-Off Fall Time -- 40 90 ns f Q Total Gate Charge -- 4.8 6.4 nC g V = 48 V, I = 13.6 A, DS D Q Gate-Source Charge V = 5 V -- 1.6 -- nC gs GS Q (Note 4) Gate-Drain Charge -- 2.7 -- nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 11 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 44 A SM V Drain-Source Diode Forward Voltage V = 0 V, I = 11 A -- -- 1.5 V SD GS S t Reverse Recovery Time V = 0 V, I = 13.6 A, -- 45 -- ns rr GS S dI / dt = 100 A/s Q Reverse Recovery Charge -- 45 -- nC F rr 1. Repetitive rating : pulse-width limited by maximum junction temperature. o 2. L = 870 H, I = 11 A, V = 25 V, R = 25 , starting T = 25 C. AS DD G J o 3. I 13.6 A, di/dt 300 A/s, V BV , starting T = 25 C. SD DD DSS J 4. Essentially independent of operating temperature. 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 FQD13N06L / FQU13N06L Rev. 1.7