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This literature is subject to all applicable copyright laws and is not for resale in any manner.FGB5N60UNDF 600 V, 5 A Short Circuit Rated IGBT September 2013 FGB5N60UNDF 600 V, 5 A Short Circuit Rated IGBT General Description Using advanced NPT IGBT technology, Fairchilds the NPT Features IGBTs offer the optimum performance for low-power inverter- driven applications where low-losses and short-circuit rugged- Short Circuit Rated 10 us ness features are essential, such as sewing machine, CNC, High Current Capability motor control and home appliances. High Input Impedance Fast Switching RoHS Compliant Applications Sewing Machine, CNC, Home Appliances, Motor Control C COLLECTOR (FLANGE) G 2 TO-263AB/D -PAK G C E E Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES V Gate to Emitter Voltage 20 V GES o Collector Current T = 25C10 A C I C o Collector Current T = 100C5 A C o I Pulsed Collector Current 15 A CM (1) T = 25 C C o Diode Forward Current T = 25C5 A C I F o Diode Forward Current T = 100C2.5 A C o Maximum Power Dissipation T = 25 C 73.5 W C P D o Maximum Power Dissipation T = 100 C 29.4 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case 1.7 C/W JC o R (Diode) Thermal Resistance, Junction to Case 4.5 C/W JC o R Thermal Resistance, Junction to Ambient (PCB Mount)(2) 40 C/W JA Notes: 2: Mounted on 1 square PCB (FR4 or G-10 material) 2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGB5N60UNDF Rev. C1