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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary I = 1.95 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 19 nC) MOSFET technology has been especially tailored to reduce Low Crss (Typ. 8.6 pF) on-state resistance, and to provide superior switching performance and high avalanche energy strength. These 100% Avalanche Tested devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D S TO-220 S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQP4N80 Unit V Drain-Source Voltage 800 V DSS I - Continuous (T = 25C) Drain Current 3.9 A D C - Continuous (T = 100C) 2.47 A C I (Note 1) Drain Current - Pulsed 15.6 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 460 mJ AS I Avalanche Current (Note 1) 3.9 A AR E (Note 1) Repetitive Avalanche Energy 13 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P Power Dissipation (T = 25C) 130 W D C - Derate above 25C 1.04 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 seconds Thermal Characteristics Symbol Parameter FQP4N80 Unit R Thermal Resistance, Junction-to-Case, Max. 0.96 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP4N80 Rev. C1