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V = 10 V, DS(on) GS duced using Fairchild Semiconductors proprietary planar stripe I = 27.5 A D and DMOS technology. This advanced MOSFET technology has Low Gate Charge (Typ. 75 nC) been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche en- Low Crss (Typ. 130 pF) ergy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable 100% Avalanche Tested switching power applications. 175C Maximum Junction Temperature Rating D G G D S TO-220 S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQP55N10 Unit V Drain-Source Voltage 100 V DSS I - Continuous (T = 25C) Drain Current 55 A D C - Continuous (T = 100C) 38.9 A C I Drain Current - Pulsed (Note 1) 220 A DM V Gate-Source Voltage 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 1100 mJ AS I Avalanche Current (Note 1) 55 A AR E (Note 1) Repetitive Avalanche Energy 15.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns P Power Dissipation (T = 25C) 155 W D C - Derate above 25C 1.03 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 seconds Thermal Characteristics Symbol Parameter FQP55N10 Unit R Thermal Resistance, Junction-to-Case, Max. 0.97 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP55N10 Rev. C1