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V = -10 V, These P-Channel enhancement mode power field effect DS(on) GS I = -0.275 A transistors are produced using Fairchilds proprietary, D planar stripe, DMOS technology. This advanced Low Gate Charge (Typ . 6.5 nC) technology has been especially tailored to minimize on- Low Crss (Typ . 6.5 pF) state resistance, provide superior switching performance, 100% Avalanche Tested and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. D D S D SOT-223 G S G D G o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQT2P25 TF Unit V Drain-Source Voltage -250 V DSS I - Continuous (T = 25C) Drain Current -0.55 A D C - Continuous (T = 100C) -0.35 A C I (Note 1) Drain Current - Pulsed -2.2 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 120 mJ AS I Avalanche Current (Note 1) -0.55 A AR E (Note 1) Repetitive Avalanche Energy 0.25 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns P Power Dissipation (T = 25C) 2.5 W D C - Derate above 25C 0.02 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQT2P25TF Unit R Thermal Resistance, Junction-to-Ambient * 50 C/W JA * When mounted on the minimum pad size recommended (PCB Mount) 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQT2P25 Rev. C0