MBR1035G ON Semiconductor

MBR1035, MBR1045 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage MBR1035, MBR1045 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage MBR1035 V 35 R MBR1045 45 Average Rectified Forward Current I A F(AV) (T = 135C, Per Device) 10 C Peak Repetitive Forward Current, I 10 A FRM (Square Wave, 20 kHz, T = 135C) C NonRepetitive Peak Surge Current I 150 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 1.0 A RRM Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature (Note 1) T 65 to +175 C J Voltage Rate of Change dv/dt V/ s (Rated V ) 10,000 R Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction toAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Conditions Symbol Max Unit C/W Maximum Thermal Resistance, Junction toCase Min. Pad R 2.0 JC Maximum Thermal Resistance, Junction toAmbient Min. Pad R 60 JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typical Max Unit Instantaneous Forward Voltage (Note 2) v V F (i = 10 Amps, T = 125C) 0.55 0.57 F j (i = 20 Amps, Tj = 125C) 0.67 0.72 F (i = 20 Amps, Tj = 25C) 0.78 0.84 F Instantaneous Reverse Current (Note 2) i mA R (Rated dc Voltage, Tj = 125C) 5.3 15 (Rated dc Voltage, Tj = 25C) 0.008 0.1 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.