Product Information

MBR2515LG

MBR2515LG electronic component of ON Semiconductor

Datasheet
Schottky Diodes & Rectifiers 25A 15V

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 400
Multiples : 50

Stock Image

MBR2515LG
ON Semiconductor

400 : USD 1.1231
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

MBR2515LG
ON Semiconductor

1 : USD 2.8281
10 : USD 2.4373
50 : USD 2.1916
100 : USD 1.9418
500 : USD 1.7343
1000 : USD 1.686
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

MBR2515LG
ON Semiconductor

1 : USD 3.7291
10 : USD 3.1016
100 : USD 2.4836
400 : USD 1.9539
1200 : USD 1.6167
2800 : USD 1.5237
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Termination Style
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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MBR2515L Switch-mode Power Rectifier Features and Benefits Low Forward Voltage MBR2515L MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 15 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (T = 91C per Device) 25 C Peak Repetitive Forward Current, per Leg (Square Wave, 20 kHz, T = 95C) I 25 A C FRM NonRepetitive Peak Surge Current I 150 A FSM (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 1.0 A RRM Storage Temperature Range T 65 to +125 C stg Operating Junction Temperature T 65 to +100 C J Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Conditions Symbol Max Unit Maximum Thermal Resistance, Junction toCase Min. Pad R 1.0 C/W JC Maximum Thermal Resistance, Junction toAmbient Min. Pad R 70 JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typical Max Unit Instantaneous Forward Voltage (Note 1) v V F (i = 25 Amps, T = 25C) 0.41 0.45 F j (i = 25 Amps, Tj = 70C) 0.37 0.42 F (i = 19 Amps, Tj = 70C) 0.34 0.38 F Instantaneous Reverse Current (Note 1) i mA R (Rated dc Voltage, Tj = 25C) 1.0 15 (Rated dc Voltage, Tj = 70C) 24 200 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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