MBR2H100SFT3G ON Semiconductor

MBR2H100SFT3G, NRVB2H100SFT3G Schottky Power Rectifier, Surface Mount 2.0 A, 100 V, SOD-123FL Package MBR2H100SFT3G, NRVB2H100SFT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM V RWM Working Peak Reverse Voltage V R DC Blocking Voltage Average Rectified Forward Current I 2.0 A O (T = 146C) L NonRepetitive Peak Surge Current I 50 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage and Operating Junction Temperature Range (Note 1) T , T 65 to +175 C stg J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 2) 23 C/W JCL Thermal Resistance, JunctiontoAmbient (Note 2) 85 C/W R JA Thermal Resistance, JunctiontoAmbient (Note 3) R 330 C/W JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit V V Maximum Instantaneous Forward Voltage (Note 4) F 0.76 (I = 1.0 A, T = 25C) F J 0.84 (I = 2.0 A, T = 25C) F J 0.61 (I = 1.0 A, T = 125C) F J 0.68 (I = 2.0 A, T = 125C) F J Maximum Instantaneous Reverse Current (Note 4) I R (Rated dc Voltage, T = 25C) 40 A J (Rated dc Voltage, T = 125C) 0.5 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2 2 2. Mounted with 700 mm copper pad size (Approximately 1 in ) 1 oz FR4 Board. 2 3. Mounted with pad size approximately 20 mm copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width 380 s, Duty Cycle 2.0%.