Product Information

MBR2H100SFT3G

MBR2H100SFT3G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Schottky Diodes & Rectifiers 2A 100V

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.1397 ea
Line Total: USD 1397

19400 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
19400 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 10000
Multiples : 10000

Stock Image

MBR2H100SFT3G
ON Semiconductor

10000 : USD 0.1456
20000 : USD 0.1428

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Factory Pack Quantity :
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif

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MBR2H100SFT3G, NRVB2H100SFT3G Schottky Power Rectifier, Surface Mount 2.0 A, 100 V, SOD-123FL Package MBR2H100SFT3G, NRVB2H100SFT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM V RWM Working Peak Reverse Voltage V R DC Blocking Voltage Average Rectified Forward Current I 2.0 A O (T = 146C) L NonRepetitive Peak Surge Current I 50 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage and Operating Junction Temperature Range (Note 1) T , T 65 to +175 C stg J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead (Note 2) 23 C/W JCL Thermal Resistance, JunctiontoAmbient (Note 2) 85 C/W R JA Thermal Resistance, JunctiontoAmbient (Note 3) R 330 C/W JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit V V Maximum Instantaneous Forward Voltage (Note 4) F 0.76 (I = 1.0 A, T = 25C) F J 0.84 (I = 2.0 A, T = 25C) F J 0.61 (I = 1.0 A, T = 125C) F J 0.68 (I = 2.0 A, T = 125C) F J Maximum Instantaneous Reverse Current (Note 4) I R (Rated dc Voltage, T = 25C) 40 A J (Rated dc Voltage, T = 125C) 0.5 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2 2 2. Mounted with 700 mm copper pad size (Approximately 1 in ) 1 oz FR4 Board. 2 3. Mounted with pad size approximately 20 mm copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width 380 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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