LOT No. LOT No. MCH3486 Power MOSFET www.onsemi.com 60V, 137m, 2A, Single N-Channel Features VV R R (on(on)) Ma Maxx II MaxMax DSSDSS DD DSDS Low R (on) 137 m137 m 10V 10V DS 60V 60V 2A 2A 192 m192 m 4. 4.55VV 4V Drive 217 m217 m 4V 4V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance Small Surface Mount Package (MCPH3) Electrical Connection N-Channel Specifications 3 Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Unit Drain to Source Voltage V 60V DSS Gate to Source Voltage V 20 V GSS 1 Drain Current (DC) I 2A D 1:Gate Drain Current (Pulse) I 8A DP 2:Source PW10s, duty cycle1% 3:Drain 2 Power Dissipation When mounted on ceramic substrate P 1 W D 2 (900mm 0.8mm) Junction Temperature Tj 150 C Packing Type:TL Marking Storage Temperature Tstg 55 to +150 C Thermal Resistance Ratings FT Parameter Symbol Value Unit TL Junction to Ambient When mounted on ceramic substrate R 125 C/W JA 2 (900mm 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number : October 2014 - Rev. 1 MCH3486/D MCH3486 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 60 V BR DSS D GS Zero-Gate Voltage Drain Current I V =60V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 1.2 2.6V GS DS D Forward Transconductance g V =10V, I=1A 1.8 S FS DS D R(on)1 I =1A, V=10V 105 137m DS D GS Static Drain to Source On-State Resistance R(on)2 I =0.5A, V=4.5V 137 192m DS D GS R(on)3 I =0.5A, V=4V 155 217m DS D GS Input Capacitance Ciss 310 pF Output Capacitance Coss V =20V, f=1MHz 40 pF DS Reverse Transfer Capacitance Crss 25 pF Turn-ON Delay Time t (on) 6 ns d Rise Time t 5 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 28 ns d Fall Time t 11 ns f Total Gate Charge Qg 7 nC Gate to Source Charge Qgs V =30V, V =10V, I =2A 1 nC DS GS D Gate to Drain Miller Charge Qgd 1.3 nC Forward Diode Voltage V I =2A, V=0V 0.83 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =30V DD IN 10V 0V I =1A D V IN R =30 L D V OUT PW=10s D.C.1% G MCH3486 P.G 50 S www.onsemi.com 2