LOT No. LOT No. Ordering number : ENA0389A MCH4009 RF Transistor MCH4009 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =5V, I =0A 1.0 A CBO CB E Emitter Cutoff Current I V =1V, I =0A 1.0 A EBO EB C DC Current Gain h V =1V, I =5mA 50 120 FE CE C Gain-Bandwidth Product f V =3V, I =20mA 20 25 GHz T CE C Reverse Transfer Capacitance V =1V, f=1MHz 0.15 pF Cre CB 2 S21e 1V =1V, I =5mA, f=2GHz 9 13.5 dB CE C Forward Transfer Gain 2 S21e 2V =3V, I =20mA, f=2GHz 17 dB CE C Noise Figure NF V =1V, I =5mA, f=2GHz 1.1 1.5 dB CE C 1dB Compression Point P V =3V, I =20mA, f=2GHz 13.5 dBm O(1dB) CE C 3rd Order Intercept Point OIP V =3V, I =20mA, f=2GHz 23 dBm 3 CE C Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted. Ordering Information Device Package Shipping memo MCH4009-TL-H MCPH4 3,000pcs./reel Pb Free and Halogen Free I -- V I -- V C CE C BE 35 40 30 30 25 20 20 15 10 10 5 I =0 A B 0 0 031 2 4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Collector-to-Emitter Voltage, V -- V IT11105 Base-to-Emitter Voltage, V -- V IT11106 CE BE h -- I Cre -- V FE C CB 3 5 f=1MHz 2 3 2 100 7 0.1 5 7 5 3 2 3 253 7 253 7 253 7 23 5 7 23 5 7 0.1 1.0 10 100 0.1 1.0 10 Collector Current, I -- mA IT11107 Collector-to-Base Voltage, V -- V IT11108 C CB No. A0389-2/15 30 A 60 A 90 A 1V V =3V CE 120A 150 A 300A 270A 240A 210A 180A 3V V =1V CE DC Current Gain, h Collector Current, I -- mA FE C Reverse Transfer Capacitance, Cre -- pF Collector Current, I -- mA C