X-On Electronics has gained recognition as a prominent supplier of MJH11022G Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. MJH11022G Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

MJH11022G ON Semiconductor

MJH11022G electronic component of ON Semiconductor
MJH11022G ON Semiconductor
MJH11022G Darlington Transistors
MJH11022G  Semiconductors

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See Product Specifications
Part No. MJH11022G
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: ON Semiconductor Darlington Transistors 15A 250V Bipolar Power NPN
Datasheet: MJH11022G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
60: USD 4.732 ea
Line Total: USD 283.92 
Availability - 203
Ship by Tue. 01 Jul to Mon. 07 Jul
MOQ: 60  Multiples: 30
Pack Size: 30
Availability Price Quantity
203
Ship by Tue. 01 Jul to Mon. 07 Jul
MOQ : 60
Multiples : 30
60 : USD 4.732
120 : USD 4.13
270 : USD 3.8675
510 : USD 3.7275
1020 : USD 3.71

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Power Dissipation
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJH11022G from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJH11022G and other electronic components in the Darlington Transistors category and beyond.

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MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington www.onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain 10 Adc h = 400 Min (All Types) FE 150250 VOLTS, 150 WATTS CollectorEmitter Sustaining Voltage V = 150 Vdc (Min) MJH11018, 17 CEO(sus) NPN PNP = 200 Vdc (Min) MJH11020, 19 COLLECTOR 2 COLLECTOR 2 = 250 Vdc (Min) MJH11022, 21 Low CollectorEmitter Saturation Voltage BASE BASE V = 1.2 V (Typ) I = 5.0 A CE(sat) C 1 1 = 1.8 V (Typ) I = 10 A C Monolithic Construction EMITTER 3 EMITTER 3 These are PbFree Devices MJH11018 MJH11017 MJH11020 MJH11019 MAXIMUM RATINGS MJH11022 MJH11021 Rating Symbol Max Unit CollectorEmitter Voltage V Vdc CEO MJH11018, MJH11017 150 MJH11020, MJH11019 200 SOT93 MJH11022, MJH11021 250 (TO218) CollectorBase Voltage V Vdc CB CASE 340D MJH11018, MJH11017 150 STYLE 1 MJH11020, MJH11019 200 1 MJH11022, MJH11021 250 2 EmitterBase Voltage V 5.0 Vdc EB 3 Collector Current Continuous I 15 Adc C Peak (Note 1) 30 TO247 CASE 340L Base Current I 0.5 Adc B STYLE 3 Total Device Dissipation T = 25 C P 150 W C D 1.2 Derate above 25 C W/ C Operating and Storage Junction Temperature T , T 65 to C J stg Range + 150 NOTE: Effective June 2012 this device will THERMAL CHARACTERISTICS be available only in the TO247 package. Reference FPCN 16827. Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 0.83 C/W JC Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information in the package 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2016 Rev. 10 MJH11017/DMJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) MARKING DIAGRAMS TO247 TO218 MJH110xx AYWWG AYWWG MJH110xx 1 BASE 3 EMITTER 1 BASE 3 EMITTER 2 COLLECTOR 2 COLLECTOR A = Assembly Location Y = Year WW = Work Week G = PbFree Package MJH110xx = Device Code xx = 17, 19, 21, 18, 20, 22 ORDERING INFORMATION Device Order Number Package Type Shipping MJH11017G TO218 30 Units / Rail (PbFree) MJH11018G TO218 30 Units / Rail (PbFree) MJH11019G TO218 30 Units / Rail (PbFree) MJH11020G TO218 30 Units / Rail (PbFree) MJH11021G TO218 30 Units / Rail (PbFree) MJH11022G TO218 30 Units / Rail (PbFree) MJH11017G TO247 30 Units / Rail (PbFree) MJH11018G TO247 30 Units / Rail (PbFree) MJH11019G TO247 30 Units / Rail (PbFree) MJH11020G TO247 30 Units / Rail (PbFree) MJH11021G TO247 30 Units / Rail (PbFree) MJH11022G TO247 30 Units / Rail (PbFree) www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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