MJL4281A (NPN) MJL4302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors MJL4281A (NPN) MJL4302A (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage V 350 Vdc CE(sus) (I = 50 mA, I = 0) C B Collector Cutoff Current I 100 Adc CEO (V = 200 V, I = 0) CE B Collector Cutoff Current I Adc CBO (V = 350 Vdc, I = 0) 50 CB E Emitter Cutoff Current I Adc EBO (V = 5.0 Vdc, I = 0) 5.0 EB C SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased I Adc S/b (V = 50 Vdc, t = 1.0 s (nonrepetitive) 4.5 CE (V = 100 Vdc, t = 1.0 s (nonrepetitive) 1.0 CE ON CHARACTERISTICS DC Current Gain h FE (I = 100 mAdc, V = 5.0 Vdc) 80 250 C CE (I = 1.0 Adc, V = 5.0 Vdc) 80 250 C CE (I = 3.0 Adc, V = 5.0 Vdc) 80 250 C CE (I = 5.0 Adc, V = 5.0 Vdc) 80 250 C CE (I = 8.0 Adc, V = 5.0 Vdc) 50 C CE (I = 15 Adc, V = 5.0 Vdc) 10 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 8.0 Adc, I = 0.8 Adc) 1.0 C B EmitterBase Saturation Voltage V Vdc BE(sat) (I = 8.0 Adc, I = 0.8 A) 1.4 C B BaseEmitter ON Voltage V Vdc BE(on) (I = 8.0 Adc, V = 5.0 Vdc) 1.5 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 1.0 Adc, V = 5.0 Vdc, f = 1.0 MHz) 35 C CE test Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 1.0 MHz) 600 CB E test