DATA SHEET www.onsemi.com Diode Small Signal MMBD1501A, MMBD1503A, MMBD1504A, MMBD1505A SOT23 (TO236) SOT23 CASE 31808 CASE 318BM ABSOLUTE MAXIMUM RATINGS (Values are at T = 25C unless otherwise noted.) (Notes 1, 2) A CONNECTION DIAGRAMS Symbol Parameter Value Unit 3 3 1501A 1503A V Maximum Repetitive Reverse Voltage 200 V RRM I Average Rectified Forward Current 200 mA F(AV) I NonRepetitive Pulse Width = 1.0 s 1.0 A FSM Peak Forward 1 2NC 1 2 Pulse Width = 1.0 s 2.0 Surge Current 3 3 1504A 1505A T Storage Temperature Range 55 to +150 C STG T Operating Junction Temperature 55 to +150 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 1 2 1 2 assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steadystate limits. onsemi should be consulted on applications involving pulsed or low dutycycle operations. MARKING DIAGRAM THERMAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted.) A A1xM Symbol Parameter Value Unit 1 P Power Dissipation 350 mW D R Thermal Resistance, 357 C/W JA A1x = Specific Device Code JunctiontoAmbient x = 1, 3, 4, 5 M = Date Code = PbFree Package ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted.) A Symbol Parameter Conditions Min Max Unit ORDERING INFORMATION See detailed ordering and shipping information on page 3 V Breakdown I = 5.0 A 200 V R R of this data sheet. Voltage V Forward Voltage I = 1.0 mA 620 720 mV F F I = 10 mA 720 830 mV F I = 50 mA 800 890 mV F I = 100 mA 830 930 mV F I = 200 mA 0.87 1.10 V F I = 300 mA 0.90 1.15 V F I Reverse Current V = 125 V 1.0 nA R R V = 125 V, 3.0 A R T = 150C A V = 180 V 10.0 nA R V = 180 V, 5.0 A R T = 150C A C Total V = 0, 4.0 pF T R Capacitance f = 1.0 MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Semiconductor Components Industries, LLC, 1993 1 Publication Order Number: January, 2022 Rev. 3 MMBD1501/DMMBD1501A, MMBD1503A, MMBD1504A, MMBD1505A TYPICAL CHARACTERISTICS 325 3 T = 25C T = 25C A A 300 2 1 275 250 0 3521003050 100 130 150 170 190 205 I , Reverse Current ( A) V , Reverse Voltage (V) R R Figure 1. Reverse Voltage vs. Reverse Current Figure 2. Reverse Current vs. Reverse Voltage I 3.0 to 100 A V 130 to 205 V R R 800 T = 25C T = 25C A A 550 750 500 700 650 450 600 400 550 500 350 1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 23 5 10 I , Forward Current ( A) I , Forward Current (mA) F F Figure 4. Forward Voltage vs. Forward Figure 3. Forward Voltage vs. Forward Current Current I 0.1 to 10 mA F I 1 to 100 A F 1.20 4.0 T = 25C T = 25C A A 1.15 3.5 1.10 1.05 3.0 1.00 2.5 0.95 2.0 0.90 0.85 1.5 0.80 0.75 1.0 10 20 30 50 100 200 300 500 800 0 2 4 6 8 10 12 14 I , Forward Current (mA) V , Reverse Voltage (V) F R Figure 5. Forward Voltage vs. Forward Current Figure 6. Total Capacitance vs. Reverse I 10 to 800 mA Voltage V 0 to 15 V F R www.onsemi.com 2 V , Forward Voltage (V) V , Forward Voltage (V) V , Reverse Voltage (V) F F R V , Forward Voltage (mV) Total Capacitance (pF) I , Reverse Current (nA) F R