MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G Monolithic Dual Switching Diodes www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS SOT23 (TO236AB) Compliant CASE 31808 STYLE 12 CATHODE MAXIMUM RATINGS (EACH DIODE) 1 ANODE Rating Symbol Value Unit 3 2 Reverse Voltage V Vdc R CATHODE MMBD2835LT1G, SMMBD2835LT1G 35 MMBD2836LT1G 75 MARKING DIAGRAM Forward Current I 100 mAdc F THERMAL CHARACTERISTICS Total Device Dissipation FR5 Board P 225 mW D xxx M (Note 1) T = 25C A Derate above 25C 1.8 mW/C 1 Thermal Resistance, JunctiontoAmbient R 556 C/W JA xxx = Specific Device Code Total Device Dissipation Alumina P 300 mW D Substrate, (Note 2) A3X = MMBD2835LT1G T = 25C SMMBD2835LT1G A Derate above 25C 2.4 mW/C A2X = MMBD2836LT1G M = Date Code Thermal Resistance, JunctiontoAmbient R 417 C/W JA = PbFree Package (Note: Microdot may be in either location) Junction and Storage Temperature T , T 55 to C J stg +150 *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. ORDERING INFORMATION 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Device Package Shipping MMBD2835LT1G SOT23 3,000 / (PbFree) Tape & Reel SMMBD2835LT1G SOT23 3,000 / (PbFree) Tape & Reel MMBD2836LT1G SOT23 3,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 7 MMBD2835LT1/DMMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (EACH DIODE) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS V Vdc Reverse Breakdown Voltage (I = 100 Adc) R (BR) MMBD2835LT1G, SMMBD2835LT1G 35 MMBD2836LT1G 75 Reverse Voltage Leakage Current (Note 3) I nAdc R (V = 30 Vdc) R MMBD2835LT1G, SMMBD2835LT1G 100 (V = 50 Vdc) R MMBD2836LT1G 100 Diode Capacitance (V = 0 V, f = 1.0 MHz) C 4.0 pF R T Forward Voltage V Vdc F (I = 10 mAdc) 1.0 F (I = 50 mAdc) 1.0 F (I = 100 mAdc) 1.2 F Reverse Recovery Time (I = I = 10 mAdc, I = 1.0 mAdc) (Figure 1) t 4.0 ns F R R(REC) rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. For each individual diode while the second diode is unbiased. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% DUT i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2