MMBF4391L, MMBF4392L, MMBF4393L JFET Switching Transistors NChannel www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2 Compliant SOT23 CASE 318 STYLE 10 MAXIMUM RATINGS 2 SOURCE Rating Symbol Value Unit DrainSource Voltage V 30 Vdc DS 3 DrainGate Voltage V 30 Vdc DG GATE GateSource Voltage V 30 Vdc GS Forward Gate Current I 50 mAdc G(f) 1 DRAIN THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Total Device Dissipation FR5 Board P D (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C XXX M Thermal Resistance, JunctiontoAmbient R 556 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be XXX = Specific Device Code assumed, damage may occur and reliability may be affected. M = Date Code* 1. FR5 = 1.0 0.75 0.062 in. = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. MARKING & ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 12 MMBF4391LT1/DMMBF4391L, MMBF4392L, MMBF4393L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V 30 Vdc (BR)GSS (I = 1.0 Adc, V = 0) G DS Gate Reverse Current I GSS (V = 15 Vdc, V = 0, T = 25C) 1.0 nAdc GS DS A (V = 15 Vdc, V = 0, T = 100C) 0.20 Adc GS DS A GateSource Cutoff Voltage V Vdc GS(off) (V = 15 Vdc, I = 10 nAdc) DS D MMBF4391LT1 4.0 10 MMBF4392LT1 2.0 5.0 MMBF4393LT1 0.5 3.0 OffState Drain Current I D(off) (V = 15 Vdc, V = 12 Vdc) 1.0 nAdc DS GS (V = 15 Vdc, V = 12 Vdc, T = 100C) 1.0 Adc DS GS A ON CHARACTERISTICS ZeroGateVoltage Drain Current I mAdc DSS (V = 15 Vdc, V = 0) DS GS MMBF4391LT1 50 150 MMBF4392LT1 25 75 MMBF4393LT1 5.0 30 DrainSource OnVoltage V Vdc DS(on) (I = 12 mAdc, V = 0) D GS MMBF4391LT1 0.4 (I = 6.0 mAdc, V = 0) D GS MMBF4392LT1 0.4 (I = 3.0 mAdc, V = 0) D GS MMBF4393LT1 0.4 Static DrainSource OnResistance r DS(on) (I = 1.0 mAdc, V = 0) D GS MMBF4391LT1 30 MMBF4392LT1 60 MMBF4393LT1 100 SMALLSIGNAL CHARACTERISTICS Input Capacitance C pF iss (V = 0 Vdc, V = 15 Vdc, f = 1.0 MHz) 14 DS GS Reverse Transfer Capacitance C pF rss (V = 0 Vdc, V = 12 Vdc, f = 1.0 MHz) 3.5 DS GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Marking Package Shipping MMBF4391LT1G 6J SMMBF4391LT1G* 6J SOT23 MMBF4392LT1G 6K 3,000 / Tape & Reel (PbFree) MMBF4393LT1G M6G SMMBF4393LT1G* M6G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2