DATA SHEET www.onsemi.com RF Amplifiers, N-Channel MMBF4416 SOT23 CASE 31808 Features This Device is Designed for RF Amplifiers MARKING DIAGRAM Sourced from Process 50 3 This is a PbFree and Halide Free Device 1: Drain ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted.) A 6AM 2: Source Symbol Parameter Value Unit 3: Gate V DrainGate Voltage 30 V DG 2 1 V GateSource Voltage 30 V GS I Forward Gate Current 10 mA 6A = Specific Device Code GF M = Date Code T , T Junction and Storage Temperature 55 to +150 C J STG = PbFree Package Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Device Package Shipping THERMAL CHARACTERISTICS (T = 25C unless otherwise noted.) (Note 1) MMBF4416 SOT23 3000 / A (PbFree/ Tape & Reel Symbol Parameter Max Unit Halide Free) P Total Device Dissipation Derate above 225 mW D For information on tape and reel specifications, 25 C 1.8 mW/ C including part orientation and tape sizes, please R Thermal Resistance, Junction to Ambient 556 C/W refer to our Tape and Reel Packaging Specification JA Brochure, BRD8011/D. 1. Device mounted on FR4 PCB 1.6 1.6 0.06. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) A Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS V GateSource Breakdown Voltage V = 0, I = 1 A 30 V (BR)GSS DS G I Gate Reverse Current V = 20 V, V = 0 1 nA GSS GS DS V = 20 V, V = 0, T = 150C 200 nA GS DS A V (off) Gate Source Cutoff Voltage V = 15 V, I = 1 nA 2.5 6 V GS DS D V Gate Source Voltage V = 15 V, I = 0.5 mA 1 5.5 V GS DS D ON CHARACTERISTICS I ZeroGate Voltage Drain Current V = 15 V, V = 0 5 15 mA DSS GS GS V (f) GateSource Forward Voltage V = 0, I = 1 mA 1 V GS DS G SMALL SIGNAL CHARACTERISTICS lY l Forward Transfer Admittance V = 15 V, V = 0, f = 1 kHz 4500 7500 mhos fs DS GS ly l Output Admittance V = 15 V, V = 0, f = 1 kHz 50 mhos os DS GS C Input Capacitance V = 15 V, V = 0, f = 1 MHz 4 pF iss DS GS C Reverse Transfer Capacitance V = 15 V, V = 0, f = 1 MHz 0.9 pF rss DS GS C Output Capacitance V = 15 V, V = 0, f = 1 MHz 2 pF oss DS GS FUNCTIONAL CHARACTERISTICS NF Noise Figure V = 15 V, I = 5 mA, R = 100 , f = 100 MHz 2 dB DS D g G Common Source Power Gain 18 dB V = 15 V, I = 5 mA, R = 100 , f = 100 MHz ps DS D g Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: January, 2022 Rev. 2 MMBF4416/DMECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT23 (TO236) CASE 31808 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 NOTES: D 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 3 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, T H E PROTRUSIONS, OR GATE BURRS. E 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 A1 0.01 0.06 0.10 0.000 0.002 0.004 3X b L1 b 0.37 0.44 0.50 0.015 0.017 0.020 e c 0.08 0.14 0.20 0.003 0.006 0.008 VIEW C D 2.80 2.90 3.04 0.110 0.114 0.120 TOP VIEW E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 0.35 0.54 0.69 0.014 0.021 0.027 L1 A HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0 10 0 10 c A1 SEE VIEW C SIDE VIEW GENERIC END VIEW MARKING DIAGRAM* RECOMMENDED SOLDERING FOOTPRINT XXXM 1 3X XXX = Specific Device Code 2.90 0.90 M = Date Code = PbFree Package *This information is generic. Please refer to 3X 0.80 0.95 device data sheet for actual part marking. PITCH PbFree indicator, G or microdot , DIMENSIONS: MILLIMETERS may or may not be present. STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8: CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE 2. EMITTER 2. BASE 2. NO CONNECTION 3. COLLECTOR 3. COLLECTOR 3. CATHODE STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14: PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE 2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE 3. CATHODE 3. GATE 3. CATHODE ANODE 3. ANODE 3. GATE 3. ANODE STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20: PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE 3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE ANODE 3. GATE STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26: PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE 2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE 3. SOURCE 3. GATE 3. NO CONNECTION 3. DRAIN 3. INPUT 3. CATHODE STYLE 27: STYLE 28: PIN 1. CATHODE PIN 1. ANODE 2. CATHODE 2. ANODE 3. CATHODE 3. ANODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. DESCRIPTION: SOT23 (TO236) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. Semiconductor Components Industries, LLC, 2019 www.onsemi.com