MMDL101T1G ON Semiconductor

MMDL101T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for highefficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features MMDL101T1G TYPICAL CHARACTERISTICS 1.0 100 0.7 0.5 V = 3.0 Vdc R 10 0.2 T = 85C T = - 40C A A 0.1 0.07 0.05 1.0 T = 25C A 0.02 MMBD110T1 MMBD110T1 0.1 0.01 30 40 50 60 70 80 90 100 110 120 130 0.3 0.4 0.5 0.6 0.7 0.8 T , AMBIENT TEMPERATURE (C) V , FORWARD VOLTAGE (VOLTS) A F Figure 1. Reverse Leakage Figure 2. Forward Voltage 1.0 11 10 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (Test Circuit Figure 5) 9 0.9 8 7 0.8 6 5 4 0.7 3 2 MMBD110T1 MMBD110T1 1 0.6 0 1.0 2.0 3.0 4.0 0.1 0.2 0.5 1.0 2.0 5.0 10 V , REVERSE VOLTAGE (VOLTS) P , LOCAL OSCILLATOR POWER (mW) R LO Figure 3. Capacitance Figure 4. Noise Figure LOCAL OSCILLATOR NOTES ON TESTING AND SPECIFICATIONS 2. C and C are measured using a capacitance bridge C T UHF DIODE IN (Boonton Electronics Model 75A or equivalent). NOISE SOURCE TUNED 3. Noise figure measured with diode under test in tuned diode H.P. 349A MOUNT mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. NOISE IF AMPLIFIER FIGURE METER NF = 1.5 dB H.P. 342A f = 30 MHz Figure 5. Noise Figure Test Circuit