NBRB8H100T4G ON Semiconductor

NBRB8H100T4G electronic component of ON Semiconductor
NBRB8H100T4G ON Semiconductor
NBRB8H100T4G Schottky Diodes & Rectifiers
NBRB8H100T4G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of NBRB8H100T4G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. NBRB8H100T4G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No. NBRB8H100T4G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 8A 100V SCHOTTKY AUTO
Datasheet: NBRB8H100T4G Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1600
Multiples : 800
QtyUnit Price
1600$ 0.5994
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.145
10$ 1.5795
100$ 1.2259
500$ 0.985
N/A

Obsolete
   
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We are delighted to provide the NBRB8H100T4G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NBRB8H100T4G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBRB8H100T4G, NBRB8H100T4G Switch-mode Schottky Power Rectifier Surface Mount Power Package MBRB8H100T4G, NBRB8H100T4G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V ) T = 171C 8 R C Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz) T = 171C 16 R C Max Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz, 25C) 250 Operating Junction and Storage Temperature Range (Note 1) T , T 65 to +175 C J stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance C/W JunctiontoCase (Note 2) R 1.1 JC JunctiontoAmbient R 44 JA 2. When mounted using minimum recommended pad size on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) V V F (I = 8 A, T = 25C) 0.71 F J (I = 8 A, T = 125C) 0.55 F J Maximum Instantaneous Reverse Current (Note 3) I R (Rated dc Voltage, T = 25C) 4.5 A J (Rated dc Voltage, T = 125C) 5.3 mA J DYNAMIC CHARACTERISTICS (Per Leg) Capacitance C pF T (V = 4.0 V, T = 25C, Frequency = 1.0 MHz) 600 R C 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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