Product Information

NBRB8H100T4G

NBRB8H100T4G electronic component of ON Semiconductor

Datasheet
Schottky Diodes & Rectifiers 8A 100V SCHOTTKY AUTO

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1600
Multiples : 800

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NBRB8H100T4G
ON Semiconductor

1600 : USD 0.6184
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

NBRB8H100T4G
ON Semiconductor

1 : USD 2.2131
10 : USD 1.6296
100 : USD 1.2648
500 : USD 1.0163
N/A

Obsolete
     
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MBRB8H100T4G, NBRB8H100T4G Switch-mode Schottky Power Rectifier Surface Mount Power Package MBRB8H100T4G, NBRB8H100T4G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V ) T = 171C 8 R C Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz) T = 171C 16 R C Max Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz, 25C) 250 Operating Junction and Storage Temperature Range (Note 1) T , T 65 to +175 C J stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance C/W JunctiontoCase (Note 2) R 1.1 JC JunctiontoAmbient R 44 JA 2. When mounted using minimum recommended pad size on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) V V F (I = 8 A, T = 25C) 0.71 F J (I = 8 A, T = 125C) 0.55 F J Maximum Instantaneous Reverse Current (Note 3) I R (Rated dc Voltage, T = 25C) 4.5 A J (Rated dc Voltage, T = 125C) 5.3 mA J DYNAMIC CHARACTERISTICS (Per Leg) Capacitance C pF T (V = 4.0 V, T = 25C, Frequency = 1.0 MHz) 600 R C 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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