Silicon Carbide Schottky Diode 1200 V, 50 A FFSH50120A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, 1. Cathode 2. Anode faster operating frequency, increased power density, reduced EMI, and Schottky Diode reduced system size & cost. Features Max Junction Temperature 175C Avalanche Rated 441 mJ High Surge Current Capacity 1 Positive Temperature Coefficient 2 TO2472LD Ease of Paralleling CASE 340CL No Reverse Recovery/No Forward Recovery This Device is PbFree, Halogen Free/BFR Free and RoHS MARKING DIAGRAM Compliant Applications General Purpose Y&Z&3&K SMPS, Solar Inverter, UPS FFSH Power Switching Circuits 50120A Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSH50120A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: December, 2019 Rev. 3 FFSH50120A/DFFSH50120A ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 1200 V RRM E Single Pulse Avalanche Energy (Note 1) 441 mJ AS I Continuous Rectified Forward Current T < 155C 50 A F C Continuous Rectified Forward Current T < 135C 77 A C I Non-Repetitive Peak Forward Surge Current T = 25C, 10 s 1700 A F, Max C 1600 A T = 150C, 10 s C I Non-Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 280 A F,SM p I Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 85 A F,RM p Ptot Power Dissipation T = 25C 736 W C T = 150C 147 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG TO247 Mounting Torque, M3 Screw 60 Ncm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 441 mJ is based on starting T = 25C, L = 0.5 mH, I = 42 A, V = 50 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max 0.17 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 50 A, T = 25C 1.45 1.75 V F F C I = 50 A, T = 125C 1.7 2.0 F C I = 50 A, T = 175C 2.0 2.4 F C I Reverse Current V = 1200 V, T = 25C 200 A R R C V = 1200 V, T = 125C 300 R C V = 1200 V, T = 175C 400 R C Q Total Capacitive Charge V = 800 V 252 nC C C Total Capacitance V = 1 V, f = 100 kHz 2560 pF R V = 400 V, f = 100 kHz 234 R V = 800 V, f = 100 kHz 190 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Shipping FFSH50120A FFSH50120A TO2472LD 30 Units / Tube www.onsemi.com 2