FFSH5065A Silicon Carbide Schottky Diode 650 V, 50 A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of 1. Cathode 2. Anode power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and Schottky Diode reduced system size & cost. Features Max Junction Temperature 175C Avalanche Rated 240 mJ High Surge Current Capacity 1 2 Positive Temperature Coefficient TO2472LD Ease of Paralleling CASE 340CL No Reverse Recovery/No Forward Recovery These Devices are PbFree, Halogen Free/BFR Free and are RoHS MARKING DIAGRAM Compliant Applications General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits Y&Z&3&K FFSH 5065A Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSH5065A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: March, 2018 Rev. 3 FFSH5065A/DFFSH5065A ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 240 mJ AS I Continuous Rectified Forward Current T < 144C 50 A F C Continuous Rectified Forward Current T < 135C 60 C I Non-Repetitive Peak Forward Surge Current T = 25C, 10 s 1400 A F, Max C 1300 A T = 150C, 10 s C I Non-Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 230 A F,SM p I Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 120 A F,RM p Ptot Power Dissipation T = 25C 429 W C T = 150C 72 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG TO247 Mounting Torque, M3 Screw 60 Ncm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 240 mJ is based on starting T = 25C, L = 0.5 mH, I = 31 A, V = 50 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max 0.35 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 50 A, T = 25C 1.51 1.75 V F F C I = 50 A, T = 125C 1.67 2.0 F C I = 50 A, T = 175C 1.82 2.4 F C I Reverse Current V = 650 V, T = 25C 200 A R R C V = 650 V, T = 125C 400 R C V = 650 V, T = 175C 600 R C Q Total Capacitive Charge V = 400 V 147 nC C C Total Capacitance V = 1 V, f = 100 kHz 2530 pF R V = 200 V, f = 100 kHz 271 R V = 400 V, f = 100 kHz 211 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse: Test Pulse width = 300 s, Duty Cycle = 2%. ORDERING INFORMATION Part Number Top Marking Package Packing Method Quantity FFSH5065A FFSH5065A TO2472LD Tube 30 Units (Pb-Free / Halogen Free) www.onsemi.com 2