Silicon Carbide Schottky Diode 650 V, 40 A FFSH4065A Description www.onsemi.com Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, 1. Cathode 2. Anode faster operating frequency, increased power density, reduced EMI, and Schottky Diode reduced system size & cost. Features Max Junction Temperature 175C Avalanche Rated 182 mJ High Surge Current Capacity 1 Positive Temperature Coefficient 2 TO2472LD Ease of Paralleling CASE 340CL No Reverse Recovery/No Forward Recovery This Device is PbFree, Halogen Free/BFR Free and RoHS MARKING DIAGRAM Compliant Applications General Purpose Y&Z&3&K SMPS, Solar Inverter, UPS FFSH Power Switching Circuits 4065A Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSH4065A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: December, 2019 Rev. 2 FFSH4065A/DFFSH4065A ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 650 V RRM E Single Pulse Avalanche Energy (Note 1) 182 mJ AS I Continuous Rectified Forward Current T < 145C 40 A F C Continuous Rectified Forward Current T < 135C 48 A C I Non-Repetitive Peak Forward Surge Current T = 25C, 10 s 1300 A F, Max C 1200 A T = 150C, 10 s C I Non-Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 180 A F,SM p I Repetitive Forward Surge Current Half-Sine Pulse, t = 8.3 ms 85 A F,RM p Ptot Power Dissipation T = 25C 349 W C T = 150C 58 W C T , T Operating and Storage Temperature Range 55 to +175 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. E of 182 mJ is based on starting T = 25C, L = 0.5 mH, I = 27 A, V = 50 V. AS J AS THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max 0.43 C/W JC ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min Typ Max Unit V Forward Voltage I = 40 A, T = 25C 1.50 1.75 V F F C I = 40 A, T = 125C 1.60 2.0 F C I = 40 A, T = 175C 1.72 2.4 F C I Reverse Current V = 650 V, T = 25C 200 A R R C V = 650 V, T = 125C 400 R C V = 650 V, T = 175C 600 R C Q Total Capacitive Charge V = 400 V 119 nC C C Total Capacitance V = 1 V, f = 100 kHz 1989 pF R V = 200 V, f = 100 kHz 218 R V = 400 V, f = 100 kHz 164 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Shipping FFSH4065A FFSH4065A TO2472LD 30 Units / Tube www.onsemi.com 2