Ignition IGBT Surface Mount > 400V > NGB8202AN 2 Pb NGB8202AN - 20 A, 400 V, N-Channel Ignition IGBT, D PAK Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for CoilonPlug and DriveronCoil Applications GateEmitter ESD Protection Temperature Compensated GateCollector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection 20 Amps, 400 Volts Low Threshold Voltage for Interfacing Power Loads to V (on) 1.3 V CE Logic or Microprocessor Devices I = 10 A, V 4.5 V C GE Low Saturation Voltage High Pulsed Current Capability Maximum Ratings (T = 25C unless otherwise noted) J These are PbFree Devices Applications Rating Symbol Value Unit Ignition Systems CollectorEmitter Voltage V 440 V CES CollectorGate Voltage V 440 V CER Functional Diagram GateEmitter Voltage V 15 V GE 20 A Collector CurrentContinuous DC I C T = 25C Pulsed 50 A C AC Continuous Gate Current I 1.0 mA G Transient Gate Current I 20 mA G (t 2 ms, f 100 Hz) ESD (ChargedDevice Model) ESD 2.0 kV ESD (Human Body Model) Additional Information ESD 8.0 kV R = 1500 , C = 100 pF ESD (Machine Model) ESD 500 V R = 0 , C = 200 pF 150 Watts Total Power Dissipation T = 25C Samples C Datasheet Resources P D Derate above 25C 1.0 W/C Operating and Storage 55 to T , T C J stg +175 Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18Ignition IGBT Surface Mount > 400V > NGB8202AN Unclamped CollectorToEmitter Avalanche Characteristics (55 T 175C) J Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy V = 50 V, V = 5.0 V, P I = 16.7 A, R = 1000 , L = 1.8 mH, Starting T = 25C 250 CC GE k L G J V = 50 V, V = 5.0 V, P I = 14.9 A, R = 1000 , L = 1.8 mH, Starting T = 150C E 200 mJ CC GE k L G J AS V = 50 V, V = 5.0 V, P I = 14.1 A, R = 1000 , L = 1.8 mH, Starting T = 175C 180 CC GE k L G J Reverse Avalanche Energy V = 100 V, V = 20 V, P I = 25.8 A, L = 6.0 mH, Starting T = 25C E 2000 mJ CC GE k L J AS(R) Thermal Characteristics Symbol Value Unit Thermal Resistance, Junction to Case R 1.0 C/W JC Thermal Resistance, Junction to Ambient (Note 1) R 62.5 C/W JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case T 275 C L for 5 seconds 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18