NGB8207BNT4G ON Semiconductor

NGB8207N, NGB8207BN Ignition IGBT 2 20 A, 365 V, NChannel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses NGB8207N, NGB8207BN UNCLAMPED COLLECTOR TOEMITTER AVALANCHE CHARACTERISTICS (55 T 175C) J Characteristic Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy E mJ AS 500 V = 50 V, V = 10 V, Pk I = 16.5 A, L = 3.7 mH, R = 1 k Starting T = 25C CC GE L g J 306 V = 50 V, V = 10 V, Pk I = 10 A, L = 6.1 mH, R = 1 k Starting T = 125C CC GE L g J Reverse Avalanche Energy E mJ AS(R) V = 100 V, V = 20 V, Pk I = 25.8 A, L = 6.0 mH, Starting T = 25C 2000 CC GE L J THERMAL CHARACTERISTICS Thermal Resistance, JunctiontoCase 0.9 C/W R JC Thermal Resistance, JunctiontoAmbient (Note 2) R 50 C/W JA Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 3) T 275 C L 2. When surface mounted to an FR4 board using the minimum recommended pad size. 3. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Clamp Voltage BV I = 2.0 mA T = 40C to 175C 325 350 375 V CES C J I = 10 mA T = 40C to 175C 340 365 390 C J Zero Gate Voltage Collector Current I V = 24 V A CES CE T = 25C 0.1 2.0 J V = 0 V GE T = 25C 1.0 5 J V = 250 V CE T = 175C 70 85 150 J V = 0 V GE T = 40C 0.25 2.5 J Reverse CollectorEmitter Clamp Voltage B T = 25C 30 33 39 V VCES(R) J I = 75 mA T = 175C 30 36 42 J C T = 40C 29 32 35 J Reverse CollectorEmitter Leakage Current I T = 25C 0.10 0.25 0.85 mA CES(R) J T = 175C 20 25 40 V = 24 V J CE T = 40C 0.03 0.3 J GateEmitter Clamp Voltage BV I = 5.0 mA T = 40C to 175C 12 13 14.5 V GES G J GateEmitter Leakage Current I V = 10 V T = 40C to 175C 500 700 1000 A GES GE J Gate Resistor R T = 40C to 175C 70 G J GateEmitter Resistor R T = 40C to 175C 14.25 16 25 k GE J ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V T = 25C 1.2 1.5 2.0 V GE(th) J I = 1.0 mA C T = 175C 0.6 0.8 1.2 J V = V GE CE T = 40C 1.4 1.7 2.0 J Threshold Temperature Coefficient (Negative) 12 12 12 mV/C CollectortoEmitter OnVoltage V T = 25C 1.0 1.3 1.6 V CE(on) J I = 6.0 A C T = 175C 0.8 1.1 1.4 J V = 4.0 V GE T = 40C 1.15 1.4 1.75 J I = 10 mA T = 25C 0.62 1.0 C J V = 4.5 V GE *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width 300 S, Duty Cycle 2%.