Ignition IGBT Surface Mount > 350V > NGD8205AN Pb NGD8205AN - 20 A, 350 V, N-Channel Ignition IGBT, DPAK Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for CoilonPlug and DriveronCoil Applications DPAK Package Offers Smaller Footprint for Increased Board Space GateEmitter ESD Protection 20 Amps, 350 Volts Temperature Compensated GateCollector Voltage Clamp Limits Stress Applied to Load V (on) 1.3 V CE Integrated ESD Diode Protection I = 10 A, V 4.5 V C GE Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Maximum Ratings (T = 25C unless otherwise noted) J Low Saturation Voltage Rating Symbol Value Unit High Pulsed Current Capability ) and GateEmitter Resistor CollectorEmitter Voltage V 390 V Optional Gate Resistor (R G CES DC (R ) GE GateGate Voltage V 390 V These are PbFree Devices CER DC Applications GateEmitter Voltage V 15 V GE DC Ignition Systems 20 A Collector CurrentContinuous DC Functional Diagram I C T = 25C Pulsed 50 A C AC Continuous Gate Current I 1.0 mA G ESD (ChargedDevice Model) ESD 2.0 kV ESD (Human Body Model) ESD 8.0 kV R = 1500 , C = 100 pF ESD (Machine Model) ESD 400 V R = 0 , C = 200 pF Additional Information 125 W Total Power Dissipation T = 25C C P D Derate above 25C 0.83 W/C 55 Operating and Storage T , T to C J stg Temperature Range +175 Samples Datasheet Resources Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18Ignition IGBT Surface Mount > 350V > NGD8205AN Unclamped CollectorToEmitter Avalanche Characteristics (55 T 175C) J Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy V = 50 V, V = 5.0 V, P I = 16.7 A, R = 1000 , L = 1.8 mH, Starting T = 25C 250 CC GE k L G J V = 50 V, V = 5.0 V, P I = 14.9 A, R = 1000 , L = 1.8 mH, Starting T = 150C E 200 mJ AS CC GE k L G J 180 V = 50 V, V = 5.0 V, P I = 14.1 A, R = 1000 , L = 1.8 mH, Starting T = 175C CC GE k L G J Reverse Avalanche Energy E 2000 mJ V = 100 V, V = 20 V, P I = 25.8 A, L = 6.0 mH, Starting T = 25C CC GE k L J AS (R) Thermal Characteristics Symbol Value Unit Thermal Resistance, Junction to Case 1.2 R JC C/W Thermal Resistance, Junction to Ambient DPAK (Note 1) 95 R JA Maximum Lead Temperature for Soldering Purposes, 1/8 T 275 C L from case for 5 seconds 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18