NGD8201B Ignition IGBT, 20 A, 400 V NChannel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and OverVoltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features 20 AMPS, 400 VOLTS Ideal for CoilonPlug Applications V 1.8 V CE(on) DPAK Package Offers Smaller Footprint for Increased Board Space I = 10 A, V 4.5 V C GE GateEmitter ESD Protection Temperature Compensated GateCollector Voltage Clamp Limits C Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy G Per Area Low Threshold Voltage Interfaces Power Loads to Logic or R GE Microprocessor Devices Low Saturation Voltage E High Pulsed Current Capability Emitter Ballasting for ShortCircuit Capability 4 DPAK These are PbFree Devices CASE 369C 2 1 STYLE 7 3 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit MARKING DIAGRAM CollectorEmitter Voltage V 430 V 1 CES DC Gate CollectorGate Voltage V 430 V CER DC AYWW 4 GateEmitter Voltage V 18 V 2 GE DC NGD Collector Collector Collector CurrentContinuous I 15 A 8201BG C DC T = 25C Pulsed 50 A C AC 3 ESD (Human Body Model) ESD kV Emitter R = 1500 , C = 100 pF 8.0 NGD8201B= Device Code ESD (Machine Model) R = 0 , C = 200 pF ESD 800 V A = Assemlby Location Y = Year Total Power Dissipation T = 25C P 115 Watts C D WW = Work Week Derate above 25C 0.77 W/C G = PbFree Device Operating and Storage Temperature Range T , T 55 to C J stg +175 ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. *For additional information on our PbFree strategy and soldering details, please NGD8201BNT4G DPAK 2500/Tape & Reel download the ON Semiconductor Soldering and Mounting Techniques (PbFree) Reference Manual, SOLDERRM/D. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2016 Rev. 4 NGD8201B/DNGD8201B UNCLAMPED COLLECTORTOEMITTER AVALANCHE CHARACTERISTICS (55 T 175C) J Characteristic Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy E mJ AS V = 50 V, V = 5.0 V, Pk I = 22 A, R = 1000 , L = 1.8 mH, Starting T = 25C 435 CC GE L G J V = 50 V, V = 5.0 V, Pk I = 17 A, R = 1000 , L = 3.0 mH, Starting T = 25C 433 CC GE L G J V = 50 V, V = 5.0 V, Pk I = 19 A, R = 1000 , L = 1.8 mH, Starting T = 125C 325 CC GE L G J Reverse Avalanche Energy E mJ AS(R) V = 100 V, V = 20 V, Pk I = 25.8 A, L = 6.0 mH, Starting T = 25C 2000 CC GE L J THERMAL CHARACTERISTICS Thermal Resistance, Junction to Case R 1.3 C/W JC Thermal Resistance, Junction to Ambient DPAK (Note 1) R 95 C/W JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds T 275 C L 1. When surface mounted to an FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Clamp Voltage BV T = 40C to 380 395 420 V CES J DC I = 2.0 mA C 150C T = 40C to 390 405 430 J I = 10 mA C 150C Zero Gate Voltage Collector Current I T = 25C 1.5 5 A CES J DC V = 350 V, CE T = 150C 10 30* J V = 0 V GE T = 40C 0.5 2.5 J V = 15 V, T = 25C 2.0 CE J V = 0 V GE Reverse CollectorEmitter Leakage Current I T = 25C 0.7 1.0 mA ECS J T = 150C 12 25* V = 24 V CE J T = 40C 0.1 1.0 J Reverse CollectorEmitter Clamp Voltage B T = 25C 27 33 37 V VCES(R) J DC T = 150C 30 36 40 I = 75 mA C J T = 40C 25 32 35 J GateEmitter Clamp Voltage BV T = 40C to 11 13 15 V GES J DC I = 5.0 mA G 150C GateEmitter Leakage Current I T = 40C to 384 640 700 A GES J DC V = 10 V GE 150C Gate Emitter Resistor (Note 3) R T = 40C to 10 16 26 k GE J 150C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Maximum Value of Characteristic across Temperature Range. www.onsemi.com 2