ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NGTB20N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low onstate voltage and minimal switching loss. The IGBT is www.onsemi.com well suited for resonant or soft switching applications. 20 A, 1350 V Features V = 2.20 V CEsat Extremely Efficient Trench with Fieldstop Technology E = 0.60 mJ off 1350 V Breakdown Voltage Optimized for Low Losses in IH Cooker Application C Reliable and Cost Effective Single Die Solution These are PbFree Devices Typical Applications G Inductive Heating Consumer Appliances E Soft Switching ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V 1350 V CES Collector current I A C G TO247 TC = 25C 40 C CASE 340AL TC = 100C 20 E Pulsed collector current, T I 120 A CM pulse limited by T , 10 s Pulse, Jmax V = 15 V GE MARKING DIAGRAM Diode forward current I A F TC = 25C 40 TC = 100C 20 Diode pulsed current, T limited I 120 A pulse FM by T , 10 s Pulse, V = 0 V Jmax GE Gateemitter voltage V 20 V GE 20N135IHR Transient Gateemitter Voltage 25 AYWWG (T = 5 s, D < 0.10) pulse Power Dissipation P W D TC = 25C 394 TC = 100C 197 Operating junction temperature T 40 to +175 C J range A = Assembly Location Storage temperature range T 55 to +175 C stg Y = Year WW = Work Week Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds G = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Device Package Shipping NGTB20N135IHRWG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: March, 2017 Rev. 1 NGTB20N135IHR/D