NGTB15N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low onstate voltage and minimal switching loss. The IGBT is NGTB15N135IHRWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase R 0.42 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1350 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 15 A V 2.15 2.65 V GE C CEsat V = 15 V, I = 15 A, T = 175C 2.25 GE C J Gateemitter threshold voltage V 4.5 5.5 6.5 V V = V , I = 250 A GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1350 V I 0.1 mA GE CE CES emitter shortcircuited Gate leakage current, collectoremitter V = 20 V, V = 0 V I 100 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 3560 pF ies Output capacitance C 87 V = 20 V, V = 0 V, f = 10 kHz oes CE GE Reverse transfer capacitance C 68 res Gate charge total Q 156 nC g Gate to emitter charge Q 27 V = 600 V, I = 15 A, V = 15 V ge CE C GE Gate to collector charge Q 70 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnoff delay time t 170 ns d(off) T = 25C J V = 600 V, I = 15 A CC C Fall time t 200 f R = 10 g V = 0 V/ 15V Turnoff switching loss E 0.42 mJ GE off ns Turnoff delay time t 190 d(off) T = 150C J V = 600 V, I = 15 A CC C Fall time t 290 f R = 10 g V = 0 V/ 15V Turnoff switching loss E 0.95 mJ GE off DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 15 A, T = 25C V 1.85 2.10 V GE F J F V = 0 V, I = 15 A, T = 175C 2.75 GE F J