Product Information

GT30J324

GT30J324 electronic component of Toshiba

Datasheet
IGBT Transistors 3PN IGBT TRC2,ACTIVE,DISCON(07-10)/PHASE-OUT(09-01)/OBSOLETE(09-04),

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 9.2839 ea
Line Total: USD 9.28

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

GT30J324
Toshiba

1 : USD 10.1527
10 : USD 8.1289
100 : USD 7.0687
500 : USD 6.1506
1000 : USD 5.2894

     
Manufacturer
Product Category
Package / Case
Brand
Dc Collector Current
Collector Emitter Saturation Voltage Vceon
Power Dissipation Pd
Collector Emitter Voltage Vbrceo
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Current Ic Continuous A Max
Fall Time Typ
Junction Temperature Tj Max
Junction To Case Thermal Resistance A
Operating Temperature Min
Operating Temperature Range
Power Dissipation Max
Pulsed Current Icm
Rise Time
Termination Type
Transistor Polarity
Transistor Type
Voltage Vces
LoadingGif

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GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Unit: mm Fast Switching Applications The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: t = 0.05 s (typ.) f Low switching loss : E = 1.00 mJ (typ.) on : E = 0.80 mJ (typ.) off Low saturation voltage: V = 2.0 V (typ.) CE (sat) FRD included between emitter and collector Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-emitter voltage V 600 V CES Gate-emitter voltage V 20 V GES JEDEC DC I 30 C Collector current A JEITA 1 ms I 60 CP TOSHIBA 2-16C1C DC I 30 F Emitter-collector forward A current Weight: 4.6 g (typ.) 1 ms I 60 FM Collector power dissipation P 170 W C (Tc = 25C) Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) R 0.735 C/W th (j-c) Thermal resistance (diode) R 1.90 C/W th (j-c) Equivalent Circuit Collector Gate Emitter 1 2002-04-19 GT30J324 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I V = 20 V, V = 0 500 nA GES GE CE Collector cut-off current I V = 600 V, V = 0 1.0 mA CES CE GE Gate-emitter cut-off voltage V I = 3 mA, V = 5 V 3.5 6.5 V GE (OFF) C CE Collector-emitter saturation voltage V I = 30 A, V = 15 V 2.0 2.45 V CE (sat) C GE Input capacitance C V = 10 V, V = 0, f = 1 MHz 4650 pF ies CE GE Turn-on delay time t 0.09 d (on) Rise time t 0.07 r Turn-on time t 0.24 on Inductive Load Switching time s Turn-off delay time t V = 300 V, I = 30 A 0.30 d (off) CC C V = +15 V, R = 24 GG G Fall time t 0.05 f (Note 1) Turn-off time t 0.43 off (Note 2) Turn-on switching E 1.00 on loss Switching loss mJ Turn-off switching E 0.80 off loss Peak forward voltage V I = 30 A, V = 0 3.8 V F F GE Reverse recovery time t I = 30 A, di/dt = 100 A/s 60 ns rr F Note 1: Switching time measurement circuit and input/output waveforms V GE 90% 10% 0 V GE I L C I V C CC 90% 90% R G V CE V 10% 10% 10% 10% CE 0 t t d (off) d (on) t f t r t t off on Note 2: Switching loss measurement waveforms V GE 90% 10% 0 I C V 5% CE 0 E E off on 2 2002-04-19

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory
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TOSHIBA SEMICONDUCTORS
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