NGTB75N60SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com copackaged free wheeling diode with a low forward voltage. Features 75 A, 600 V T = 175C Jmax V = 1.70 V CEsat Soft Fast Reverse Recovery Diode E = 1.0 mJ OFF Optimized for High Speed Switching 5 s ShortCircuit Capability C These are PbFree Devices Typical Applications Welding G ABSOLUTE MAXIMUM RATINGS E Rating Symbol Value Unit Collectoremitter voltage V 600 V CES Collector current I A C TC = 25C 100 TC = 100C 75 Diode Forward Current I A F G TO247 TC = 25C 100 C TC = 100C 75 CASE 340AL E Diode Pulsed Current I 200 A FM T Limited by T Max PULSE J Pulsed collector current, T I 200 A pulse CM MARKING DIAGRAM limited by T Jmax Shortcircuit withstand time t 5 s SC V = 15 V, V = 400 V, GE CE T +150C J Gateemitter voltage V 20 V GE 75N60S V Transient gateemitter voltage 30 AYWWG (T = 5 s, D < 0.10) PULSE Power Dissipation P W D TC = 25C 595 TC = 100C 265 Operating junction temperature T 55 to +175 C J range A = Assembly Location Storage temperature range T 55 to +175 C Y = Year stg WW = Work Week Lead temperature for soldering, 1/8 T 260 C SLD G = PbFree Package from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Device Package Shipping NGTB75N60SWG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2014 Rev. 1 NGTB75N60SW/DNGTB75N60SWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.28 C/W JC Thermal resistance junctiontocase, for Diode R 0.62 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 600 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 75 A V 1.50 1.70 2.00 V GE C CEsat V = 15 V, I = 75 A, T = 175C 1.85 GE C J Gateemitter threshold voltage V = V , I = 350 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 600 V I 0.1 mA GE CE CES emitter shortcircuited V = 0 V, V = 600 V, T 175C 4.0 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 7500 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 300 CE GE oes Reverse transfer capacitance C 190 res Gate charge total Q 310 nC g Gate to emitter charge V = 480 V, I = 75 A, V = 15 V Q 60 CE C GE ge Gate to collector charge Q 150 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 110 ns d(on) Rise time t 48 r Turnoff delay time T = 25C t 270 J d(off) V = 400 V, I = 75 A CC C Fall time t 70 f R = 10 g Turnon switching loss V = 0 V/ 15 V E 1.5 mJ GE on Turnoff switching loss E 1.0 off Total switching loss E 2.5 ts Turnon delay time t 100 ns d(on) Rise time t 50 r Turnoff delay time T = 150C t 280 J d(off) V = 400 V, I = 75 A CC C Fall time t 100 f R = 10 g Turnon switching loss V = 0 V/ 15 V E 1.9 mJ GE on Turnoff switching loss E 1.8 off Total switching loss E 3.7 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 75 A V 1.70 2.20 2.90 V GE F F V = 0 V, I = 50 A, T = 175C 2.40 GE F J Reverse recovery time t 80 ns rr T = 25C J Reverse recovery charge Q 0.40 C I = 75 A, V = 200 V F R rr di /dt = 200 A/ s F Reverse recovery current I 8 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2