MBRAF440, NRVBAF440 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlay www.onsemi.com contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. SCHOTTKY BARRIER RECTIFIER Features 4.0 AMPERE Low Profile Package for Space Constrained Applications 40 VOLTS Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction 150C Operating Junction Temperature GuardRing for Stress Protection NRV Prefix for Automotive and Other Applications Requiring SMAFL Unique Site and Control Change Requirements AECQ101 CASE 403AA Qualified and PPAP Capable STYLE 6 These are PbFree and HalideFree Devices MARKING DIAGRAM Mechanical Charactersistics Case: Epoxy, Molded, Epoxy Meets UL 94, V0 RAF Weight: 95 mg (approximately) AYWW Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: RAF = Specific Device Code 260C Max. for 10 Seconds A = Assembly Location Y = Year Cathode Polarity Band WW = Work Week Device Meets MSL 1 Requirements = PbFree Package ORDERING INFORMATION Device Package Shipping MBRAF440T3G SMAFL 5000 / Tape & Reel (PbFree) NRVBAF440T3G SMAFL 5000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: December, 2016 Rev. 3 MBRAF440T3/DMBRAF440, NRVBAF440 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 40 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O (At Rated V , T = 107C) 4.0 R L NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 100 Storage/Operating Case Temperature T , T 55 to +150 C stg C Operating Junction Temperature (Note 1) T 55 to +150 C J Voltage Rate of Change dv/dt V/ s (Rated V , T = 25C) 10,000 R J ESD Rating Human Body Model ESD 3B HBM Machine Model ESD M4 MM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Symbol Value Unit Characteristic Thermal Resistance JunctiontoLead (Note 2) R 25 C/W JL Thermal Resistance JunctiontoAmbient (Note 2) R 90 JA 2. 1 inch square pad size (1 0.5 inch) for each lead on FR4 board. ELECTRICAL CHARACTERISTICS Symbol Value Unit Characteristic V T = 25C T = 100C V Maximum Instantaneous Forward Voltage (Note 3) F J J (I = 4.0 A) F 0.485 0.435 Maximum Instantaneous Reverse Current I T = 25C T = 100C mA R J J 0.3 15 (V = 40 V) R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. www.onsemi.com 2