NRVBB1060, NRVBB1060W1 Switch-mode Power Rectifier This switchmode power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This stateoftheart device www.onsemi.com has the following features: SCHOTTKY BARRIER Features RECTIFIER Low Forward Voltage 10 AMPERES, 60 VOLTS 175C Operating Junction Temperature Low Power Loss/High Efficiency 1 1 High Surge Capacity 4 4 3 3 For Automotive and Other Applications Requiring Unique Site and STYLE 3 STYLE 6 Control Change Requirements AECQ101 Qualified and PPAP Capable This is a PbFree Device 4 Applications 1 Power Supply Output Rectification 3 2 D PAK Power Management CASE 418B STYLE 3, 6 Mechanical Characteristics Case: Epoxy, Molded MARKING DIAGRAMS Epoxy Meets UL 94 V0 0.125 in Weight: 1.7 Grams (Approximately) AY WW AY WW Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable B1060G 1060W1G x K A x K A Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds NRVBB1060 NRVBB1060W1 A = Assembly Location Y = Year WW = Work Week G = PbFree Package xKA = Diode Polarity x = N or A ORDERING INFORMATION Device Package Shipping 2 NRVBB1060T4G D PAK 800/Tape & Reel (PbFree) 2 NRVBB1060W1T4G D PAK 800/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: January, 2016 Rev. 3 NRVBB1060/DNRVBB1060, NRVBB1060W1 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 60 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current (Rated V ) T = 133C I 10 A R C F(AV) Peak Repetitive Forward Current I 20 A FRM (Rated V , Square Wave, 20 kHz) T = 133C R C Nonrepetitive Peak Surge Current I 150 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 0.5 A RRM Operating Junction Temperature (Note 1) T 65 to +175 C J Storage Temperature T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Maximum Thermal Resistance, JunctiontoCase R 2.0 C/W JC Maximum Thermal Resistance, JunctiontoAmbient R 60 C/W JA ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) v V F (i = 10 Amps, T = 125C) 0.7 F C (i = 10 Amps, T = 25C) 0.8 F C (i = 20 Amps, T = 125C) 0.85 F C (i = 20 Amps, T = 25C) 0.95 F C Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated dc Voltage, T = 125C) 25 C (Rated dc Voltage, T = 25C) 0.10 C 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2