NSD16F3T5G ON Semiconductor

NSD16F3T5G Switching Diode The NSD16F3T5G device is a spinoff of our popular SOT23 threeleaded device. It is designed for switching applications and is housed in the SOT1123 surface mount package. This device is ideal for lowpower surface mount applications where board space is at a premium. NSD16F3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I Adc R (V = 100 Vdc) 1.0 R (V = 75 Vdc, T = 150C) 50 R J (V = 25 Vdc, T = 150C) 30 R J Reverse Breakdown Voltage V 75 Vdc (BR) (I = 100 Adc) BR Forward Voltage V mV F (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F Diode Capacitance C 2.0 pF D (V = 0, f = 1.0 MHz) R Forward Recovery Voltage V 1.75 Vdc FR (I = 10 mAdc, t = 20 ns) F r Reverse Recovery Time t 6.0 ns rr (I = I = 10 mAdc, R = 50 ) F R L Stored Charge Q 45 pC S (I = 10 mAdc to V = 5.0 Vdc, R = 500 ) F R L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit