NSVBAT54M3T5G ON Semiconductor

BAT54M3T5G Schottky Barrier Diode This Schottky barrier diode is designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. BAT54M3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (I = 10 A) V 30 V R (BR)R Total Capacitance (V = 1.0 V, f = 1.0 MHz) C 7.6 10 pF R T Reverse Leakage (V = 25 V) I 0.5 2.0 A R R Forward Voltage (I = 0.1 mA) V 0.22 0.24 V F F (I = 1.0 mA) 0.29 0.32 F (I = 10 mA) 0.35 0.40 F (I = 30 mA) 0.41 0.5 F (I = 100 mA) F 0.52 0.8 Reverse Recovery Time (I = I = 10 mA, I = 1.0 mA, Figure 1) t 5.0 ns F R R(REC) rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.