NSR0240MX Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dcdc converter, clamping and protection applications in portable devices. NSR0240MX in a X2DFN2 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting www.onsemi.com reduced space requirements. Features 40 V SCHOTTKY Very Low Forward Voltage Drop 460 mV 100 mA BARRIER DIODE Low Reverse Current 0.2 A 25 V VR 200 mA of Continuous Forward Current Very High Switching Speed 1 2 CATHODE ANODE Low Capacitance CT = 7 pF This is a PbFree Device Typical Applications MARKING DIAGRAM LCD and Keypad Backlighting Camera Photo Flash X2DFN2 R M Buck and Boost dcdc Converters CASE 714AB Reverse Voltage and Current Protection R = Specific Device Code Clamping & Protection M = Month Code Markets Mobile Handsets ORDERING INFORMATION MP3 Players Device Package Shipping Digital Camera and Camcorders Notebook PCs & PDAs NSR0240MXT5G X2DFN2 8000 / Tape & Reel (PbFree) GPS For information on tape and reel specifications, MAXIMUM RATINGS including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Rating Symbol Value Unit Brochure, BRD8011/D. Reverse Voltage V 40 V R Forward Current (DC) I 200 mA F NonRepetitive Peak Forward Surge Current, I 3.0 A FSM Square Wave, 10 ms Repetitive Peak Forward Current, I 1.0 A FRM Square Wave, 1.0 ms, D.C. = 25% ESD Rating: Human Body Model ESD Class 1C Machine Model Class A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: July, 2015 Rev. 1 NSR0240MX/DNSR0240MX THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 400 C/W JA Total Power Dissipation T = 25C P 300 mW A D Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 1. FR4, 20 mm , 1 oz. Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 25 V) 0.2 0.55 R (V = 40 V) 0.8 5.0 R Forward Voltage V V F (I = 0.1 mA) 0.21 0.24 F (I = 1.0 mA) 0.27 0.30 F (I = 10 mA) 0.34 0.365 F (I = 100 mA) 0.46 0.50 F (I = 200 mA) 0.54 0.60 F Total Capacitance 7.0 pF CT (V = 1.0 V, f = 1 MHz) R 1000 1.0E02 1.0E03 150C 100 1.0E04 85C 125C 125C 10 1.0E05 75C 150C 1 1.0E06 25C 1.0E07 0.1 1.0E08 40C 0.01 1.0E09 85C 25C 40C 0.001 1.0E10 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 35 40 45 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R Figure 1. Forward Voltage Figure 2. Leakage Current 14 12 T = 25C A 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 V , REVERSE VOLTAGE (V) R Figure 3. Total Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C , TOTAL CAPACITANCE (pF) T I , REVERSE CURRENT (A) r